@article {265, title = {Undressing a collective intersubband excitation in a quantum well}, journal = {Physical Review Letters}, volume = {76}, number = {13}, year = {1996}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
78}, month = {Mar 25}, pages = {2382-2385}, abstract = {

We have experimentally measured the 1-2 intersubband absorption in a single 40 nm wide modulation-doped Al0.3Ga0.7As/GaAs square quantum well as a function of frequency, intensity, and charge density. The low-intensity depolarization-shifted absorption occurs near 80 cm(-1) (10 meV or 2.4 THz), nearly 30\% higher than the intersubband spacing. At higher intensities, the absorption peak shifts to lower frequencies. Our data are in good agreement with a theory proposed by Zaluzny, which attributes the redshift to a reduction in the depolarization shift as the excited subband becomes populated.

}, isbn = {0031-9007}, doi = {10.1103/PhysRevLett.76.2382}, author = {Craig, K. and Galdrikian, B. and Heyman, J. N. and Markelz, A. G. and Williams, J. B. and Sherwin, M. S. and Campman, K. and Hopkins, P. F. and Gossard, A. C.} } @article {272, title = {NONLINEAR QUANTUM DYNAMICS IN SEMICONDUCTOR QUANTUM-WELLS}, journal = {Physica D-Nonlinear Phenomena}, volume = {83}, number = {1-3}, year = {1995}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
14th Annual International Conference of the Center-for-Nonlinear-Studies - Quantum Complexity in Mesoscopic Systems
May 16-20, 1994
Los alamos, nm
Ctr nonlinear studies
34}, month = {May 15}, pages = {229-242}, abstract = {

We discuss recent measurements of the nonlinear response of electrons in wide quantum wells driven by intense electromagnetic radiation at terahertz frequencies. The theme is the interplay of quantum mechanics, strong periodic driving, the electron-electron interaction and dissipation. We discuss harmonic generation from an asymmetric double quantum well in which the effects of dynamic screening are important. Measurements and theory are found to be in good agreement. We also discuss intensity-dependent absorption in a 400 Angstrom square quantum well. A new nonlinear quantum effect occurs, in which the frequency at which electromagnetic radiation is absorbed shifts to the red with increasing intensity. The preliminary experimental results are in agreement with a theory by Zaluzny, in which the source of the nonlinearity is the self-consistent potential in the Hartree approximation for the electron dynamics.

}, isbn = {0167-2789}, doi = {10.1016/0167-2789(94)00266-S}, author = {Sherwin, M. S. and Craig, K. and Galdrikian, B. and Heyman, J. and Markelz, A. and Campman, K. and Fafard, S. and Hopkins, P. F. and Gossard, A.} } @article {259, title = {RESONANT-ENERGY RELAXATION OF TERAHERTZ-DRIVEN 2-DIMENSIONAL ELECTRON GASES}, journal = {Physical Review B}, volume = {51}, number = {24}, year = {1995}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
119}, month = {Jun 15}, pages = {18041-18044}, isbn = {0163-1829}, doi = {10.1103/PhysRevB.51.18041}, author = {Asmar, N. G. and Markelz, A. G. and Gwinn, E. G. and Cerne, J. and Sherwin, M. S. and Campman, K. L. and Hopkins, P. F. and Gossard, A. C.} } @article {260, title = {DC TRANSPORT IN INTENSE, INPLANE TERAHERTZ ELECTRIC-FIELDS IN AL(X)GA(1-X)AS HETEROSTRUCTURES AT 300-K}, journal = {Solid-State Electronics}, volume = {37}, number = {4-6}, year = {1994}, note = {Markelz, Andrea/0000-0003-0443-4319
6th International Conference on Modulated Semiconductor Structures
Aug 23-27, 1993
Garmisch partenkir, germany
Tech univ munchen, walter schottky inst
1}, month = {Apr-Jun}, pages = {693-695}, abstract = {

We report 300 K studies of the dependence of the in-plane, d.c. conductivity, sigma(d.c.) (E(omega)), of a quasi 2D electron gas on the amplitude E(omega) and frequency of intense, far-infrared fields (omega/2pi = 0.24-3.5 THz). We measure sigma(d.c.) (E(omega) parallel-to E(d.c.)), where E(d.c.) is a small sensing field, and observe a monotonic decrease in sigma(d.c.) with increasing E(omega). Although a simple scaling ansatz collapses the measured sigma(d.c.) (E(omega)) data onto a single curve for frequencies from 0.25-3.45 THz (at low to moderate scaled fields), the decrease in conductivity is substantially more rapid than expected from comparison to similar data taken by Masselink et al. [Solid-St. Electron. 31, 337 (1988)] at 35 GHz. We tentatively attribute this difference to effects of a high-frequency modulation in the electron temperature.

}, isbn = {0038-1101}, doi = {10.1016/0038-1101(94)90278-X}, author = {Asmar, N. G. and Markelz, A. G. and Gwinn, E. G. and Hopkins, P. F. and Gossard, A. C.} } @article {261, title = {ENERGY RELAXATION AT THZ FREQUENCIES IN ALXGA1-XAS HETEROSTRUCTURES}, journal = {Semiconductor Science and Technology}, volume = {9}, number = {5}, year = {1994}, note = {Markelz, Andrea/0000-0003-0443-4319
S
8th International Conference on Hot Carriers in Semiconductors
Aug 16-20, 1993
Oxford univ, oxford, england
Sci \& engn res council; royal soc; brit council; oxford univ
2}, month = {May}, pages = {828-830}, abstract = {

We report 4.2 K studies of the dependence of the in-plane, DC conductivity of a quasi 2D electron gas on the amplitude E(omega) of applied fields with frequencies from 0.25 THz to 3.5 THz. We analyse the dependence of sigma(DC) on E(omega) assuming that electron-optical phonon scattering dominates energy relaxation, that the absorbed power has a Drude form and that the electron distribution is thermal. This simple analysis is self-consistent: Arrhenius plots of the estimated energy loss rate have a slope near -homega(LO)BAR/k(B) for all frequencies, as expected for energy loss by optical phonon emission. We find that the effective energy relaxation time tau(epsilon) varies with the frequency of the applied field, from tau(epsilon) approximately 4 ps at 0.34 THz to tau(epsilon) approximately 0.3 ps at 3.45 THz. This may indicate a frequency-dependent form for the hot-phonon distribution.

}, isbn = {0268-1242}, doi = {10.1088/0268-1242/9/5S/116}, author = {Asmar, N. G. and Markelz, A. G. and Gwinn, E. G. and Hopkins, P. F. and Gossard, A. C.} } @article {264, title = {FAR-INFRARED SATURATION SPECTROSCOPY OF A SINGLE SQUARE-WELL}, journal = {Semiconductor Science and Technology}, volume = {9}, number = {5}, year = {1994}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
S
8th International Conference on Hot Carriers in Semiconductors
Aug 16-20, 1993
Oxford univ, oxford, england
Sci \& engn res council; royal soc; brit council; oxford univ
31}, month = {May}, pages = {627-629}, abstract = {

We have performed saturation spectroscopy measurements of the lowest intersubband transition in a single 400 angstrom GaAs/Al0.3Ga0.7As modulation-doped square quantum well. We couple intense tunable far-infrared radiation from the Santa Barbara free electron laser into our sample using an edge-coupling technique and measure absorption as a function of frequency and intensity. Saturation and frequency shifts in the absorption line are clearly observed. We attribute the frequency shifts to reductions in the many-body depolarization shift. From our preliminary measurements, we estimate the intersubband relaxation time to be 600 ps to within a factor of three.

}, isbn = {0268-1242}, doi = {10.1088/0268-1242/9/5S/061}, author = {Craig, K. and Felix, C. L. and Heyman, J. N. and Markelz, A. G. and Sherwin, M. S. and Campman, K. L. and Hopkins, P. F. and Gossard, A. C.} } @article {257, title = {PROBING TERAHERTZ DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH UCSB FREE-ELECTRON LASERS}, journal = {Journal of Luminescence}, volume = {60-1}, year = {1994}, note = {Sherwin, Mark S/Q-4762-2017; Guimaraes, Paulo Sergio Soares/B-6918-2012
Sherwin, Mark S/0000-0002-3869-1893; Guimaraes, Paulo Sergio Soares/0000-0002-0113-2641; Markelz, Andrea/0000-0003-0443-4319
1993 International Conference on Luminescence (ICL 93)
Aug 09-13, 1993
Univ connecticut, storrs, ct
Univ connecticut; opt soc amer; amer phys soc; ieee, laser \& electro opt soc; int union pure \& appl phys; int sci fdn; univ connecticut res fdn
3}, month = {Apr}, pages = {250-255}, abstract = {

The UCSB free-electron lasers provide kilowatts of continuously tunable radiation from 120 GHz to 4.8 THz. They have the most impact on terahertz science and technology that require a tunable, high power source to explore non-linear dynamics or that sacrifice incident power to recover the linear response of systems with very small cross-section. We describe three experiments that demonstrate the utility of these lasers in experiments on the terahertz dynamics of semiconductor nanostructures: (i) terahertz dynamics of resonant tunneling diodes, (ii) saturation spectroscopy of quantum wells and (iii) photon-assisted tunneling in superlattices.

}, isbn = {0022-2313}, doi = {10.1016/0022-2313(94)90142-2}, author = {Allen, S. J. and Craig, K. and Felix, C. L. and Guimaraes, P. and Heyman, J. N. and Kaminski, J. P. and Keay, B. J. and Markelz, A. G. and Ramian, G. and Scott, J. S. and Sherwin, M. S. and Campman, K. L. and Hopkins, P. F. and Gossard, A. C. and Chow, D. and Lui, M. and Liu, T. Y.} } @proceedings {320, title = {Far-infrared nonlinear response of electrons in semiconductor nanostructures}, volume = {1854}, year = {1993}, pages = {36-47}, author = {Sherwin, M. S. and Asmar, N. G. and Bewley, W. W. and Craig, K. and Felix, C. L. and Galdrikian, B. and Gwinn, E. G. and Markelz, A.G. and Gossard, A. C. and Hopkins, P. F. and Sundaram, M. and Birnir, B.} }