@article {243, title = {Terahertz response of quantum point contacts}, journal = {Applied Physics LettersApplied Physics LettersApplied Physics Letters}, volume = {92}, number = {22}, year = {2008}, note = {ISI Document Delivery No.: 310KL
Times Cited: 25
Cited Reference Count: 21
Cited References:
Aizin GR, 2007, APPL PHYS LETT, V91, DOI 10.1063/1.2800369
ARNONE DD, 1995, APPL PHYS LETT, V66, P3149, DOI 10.1063/1.113705
FENG SC, 1993, PHYS REV B, V48, P5354, DOI 10.1103/PhysRevB.48.5354
Hashiba H, 2004, APPL PHYS LETT, V85, P6036, DOI 10.1063/1.1834716
HU Q, 1993, APPL PHYS LETT, V62, P837, DOI 10.1063/1.108567
Hu Q, 1996, SEMICOND SCI TECH, V11, P1888, DOI 10.1088/0268-1242/11/12/021
JANSSEN TJBM, 1994, J PHYS-CONDENS MAT, V6, pL163, DOI 10.1088/0953-8984/6/13/002
Kabir NA, 2006, APPL PHYS LETT, V89, DOI 10.1063/1.2357605
KARADI C, 1994, J OPT SOC AM B, V11, P2566, DOI 10.1364/JOSAB.11.002566
Knap W, 2002, APPL PHYS LETT, V81, P4637, DOI 10.1063/1.1525851
Knap W, 2002, APPL PHYS LETT, V80, P3433, DOI 10.1063/1.1473685
Lee M, 2005, APPL PHYS LETT, V86, DOI 10.1063/1.1851606
MITTLEMAN D, 2002, SPRINGER SERIES OPTI
Peralta XG, 2002, APPL PHYS LETT, V81, P1627, DOI 10.1063/1.1497433
Ryzhii V, 2006, JPN J APPL PHYS 2, V45, pL1118, DOI 10.1143/JJAP.45.L1118
Shaner EA, 2007, APPL PHYS LETT, V90, DOI 10.1063/1.2735943
Shaner EA, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2128057
Teppe F, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2005394
VANHOUTEN H, 1992, SEMICONDUCT SEMIMET, P9
WYSS RA, 1993, APPL PHYS LETT, V63, P1522, DOI 10.1063/1.110736
WYSS RA, 1995, APPL PHYS LETT, V66, P1144, DOI 10.1063/1.113840
Song, J. W. Kabir, N. A. Kawano, Y. Ishibashi, K. Aizin, G. R. Mourokh, L. Reno, J. L. Markelz, A. G. Bird, J. P.
Ishibashi, Koji/G-7065-2012; Bird, Jonathan P/G-4068-2010
Ishibashi, Koji/0000-0001-8131-9969; Bird, Jonathan P/0000-0002-6966-9007; Markelz, Andrea/0000-0003-0443-4319
27

6
Amer inst physics
Melville
1077-3118}, month = {Jun}, pages = {3}, type = {Article}, abstract = {

We measure a clear terahertz response in the low-temperature conductance of a quantum point contact at 1.4 and 2.5 THz. We show that this photoresponse does not arise from a heating effect, but that it is instead excellently described by a classical model of terahertz-induced gate-voltage rectification. This effect is distinct from the rectification mechanisms that have been studied previously, being determined by the phase-dependent interference of the source drain and gate voltage modulations induced by the terahertz field. (C) 2008 American Institute of Physics.

}, keywords = {detector, devices, field-effect transistors, Physics, plasma-waves, radiation, resonant detection, subterahertz, transport}, isbn = {0003-6951}, doi = {https://doi.org/10.1063/1.2938416}, author = {Song, J. W. and Kabir, N. A. and Kawano, Y. and Ishibashi, K. and Aizin, G. R. and Mourokh, L. and Reno, J. L. and Markelz, A. G. and Bird, J. P.} } @article {229, title = {Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems}, journal = {Applied Physics Letters}, volume = {89}, number = {13}, year = {2006}, note = {ISI Document Delivery No.: 089JE
Times Cited: 18
Cited Reference Count: 16
Cited References:
ANDO T, 1982, REV MOD PHYS, V54, P437, DOI 10.1103/RevModPhys.54.437
ANDO T, 1989, HIGH MAGNETIC FIELDS, V2, P164
Ashcroft NW, 1976, SOLID STATE PHYS, P1
Beard MC, 2000, PHYS REV B, V62, P15764, DOI 10.1103/PhysRevB.62.15764
Cerne J, 2000, PHYS REV B, V61, P8133, DOI 10.1103/PhysRevB.61.8133
COLERIDGE PT, 1991, PHYS REV B, V44, P3793, DOI 10.1103/PhysRevB.44.3793
Dorozhkin PS, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2035883
Knap W, 2002, APPL PHYS LETT, V81, P4637, DOI 10.1063/1.1525851
Knap W, 2002, APPL PHYS LETT, V80, P3433, DOI 10.1063/1.1473685
Kukushkin IV, 2005, APPL PHYS LETT, V86, DOI 10.1063/1.1856143
MADELUNG O, 1996, SEMICONDUCTORS BASIC, P109
MCKNIGHT SW, 1987, INFRARED PHYS, V27, P327, DOI 10.1016/0020-0891(87)90074-1
Peralta XG, 2002, APPL PHYS LETT, V81, P1627, DOI 10.1063/1.1497433
Sadofyev YG, 2002, APPL PHYS LETT, V81, P1833, DOI 10.1063/1.1504882
Shaner EA, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2128057
ZAWADZKI W, 1974, ADV PHYS, V23, P435, DOI 10.1080/00018737400101371
Kabir, N. A. Yoon, Y. Knab, J. R. Chen, J. -Y. Markelz, A. G. Reno, J. L. Sadofyev, Y. Johnson, S. Zhang, Y. -H. Bird, J. P.
Bird, Jonathan P/G-4068-2010
Bird, Jonathan P/0000-0002-6966-9007; Markelz, Andrea/0000-0003-0443-4319
18

15
Amer inst physics
Melville}, month = {Sep}, pages = {3}, type = {Article}, abstract = {

Frequency-dependent complex conductivity of high-mobility GaAs and InAs two-dimensional-electron-gas (2DEG) systems is studied by terahertz time domain spectroscopy. Determining the momentum relaxation time from a Drude model, the authors find a lower value than that from dc measurements, particularly at high frequencies/low temperatures. These deviations are consistent with the ratio tau(t)/tau(q,) where tau(q) is the full scattering time. This suggests that small-angle scattering leads to weaker heating of 2DEGs at low temperatures than expected from dc mobilit9y. (c) 2006 American Institute of Physics.

}, keywords = {field-effect transistors, photoconductivity, Physics, plasma-waves, radiation, resonant detection, subterahertz}, isbn = {0003-6951}, doi = {10.1063/1.2357605}, author = {Kabir, N. A. and Yoon, Y. and Knab, J. R. and Chen, J. Y. and Markelz, A. G. and Reno, J. L. and Sadofyev, Y. and Johnson, S. and Zhang, Y. H. and Bird, J. P.} }