@article {258, title = {Temperature of quasi-two-dimensional electron gases under steady-state terahertz drive}, journal = {Applied Physics Letters}, volume = {68}, number = {6}, year = {1996}, note = {ISI Document Delivery No.: TT663
Times Cited: 59
Cited Reference Count: 12
Cited References:
ASMAR NG, 1995, PHYS REV B, V51, P18041, DOI 10.1103/PhysRevB.51.18041
BETHUNE DS, 1989, J OPT SOC AM B, V6, P910, DOI 10.1364/JOSAB.6.000910
CERNE J, 1995, PHYS REV B, V51, P5253, DOI 10.1103/PhysRevB.51.5253
CONWELL E, 1967, SOLID STATE PHYS S, V9
GUPTA R, 1992, PHYS REV B, V46, P7745, DOI 10.1103/PhysRevB.46.7745
HEYMAN JN, 1994, PHYS REV LETT, V72, P2183, DOI 10.1103/PhysRevLett.72.2183
KOMIYAMA S, 1985, PHYS REV B, V32, P5532, DOI 10.1103/PhysRevB.32.5532
MARKELZ AG, 1994, SOLID STATE ELECTRON, V37, P1243, DOI 10.1016/0038-1101(94)90399-9
MARKELZ AG, 1995, THESIS U CALIFORNIA
SHAH J, 1984, APPL PHYS LETT, V44, P322, DOI 10.1063/1.94739
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Asmar, NG Cerne, J Markelz, AG Gwinn, EG Sherwin, MS Campman, KL Gossard, AC
Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
59

7
Amer inst physics
Woodbury}, month = {Feb}, pages = {829-831}, type = {Article}, abstract = {

We use photoluminescence to study the time-average energy distribution of electrons in the presence of strong steady-state drive at terahertz (THz) frequencies, in a modulation-doped 125 Angstrom AlGaAs/GaAs square well that is held at low lattice temperature TL. We find that the energy distribution can be characterized by an effective electron temperature, T-e(\>T-L), that agrees well with values estimated from the THz-illuminated, dc conductivity. This agreement indicates that under strong THz drive, LO phonon scattering dominates both energy and momentum relaxation; that the carrier distribution maintains a heated, thermal form; and that phonon drift effects are negligible. (C) 1996 American Institute of Physics.

}, keywords = {hot-electrons, Physics}, isbn = {0003-6951}, doi = {10.1063/1.116547}, author = {Asmar, N. G. and Cerne, J. and Markelz, A. G. and Gwinn, E. G. and Sherwin, M. S. and Campman, K. L. and Gossard, A. C.} } @article {265, title = {Undressing a collective intersubband excitation in a quantum well}, journal = {Physical Review Letters}, volume = {76}, number = {13}, year = {1996}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
78}, month = {Mar 25}, pages = {2382-2385}, abstract = {

We have experimentally measured the 1-2 intersubband absorption in a single 40 nm wide modulation-doped Al0.3Ga0.7As/GaAs square quantum well as a function of frequency, intensity, and charge density. The low-intensity depolarization-shifted absorption occurs near 80 cm(-1) (10 meV or 2.4 THz), nearly 30\% higher than the intersubband spacing. At higher intensities, the absorption peak shifts to lower frequencies. Our data are in good agreement with a theory proposed by Zaluzny, which attributes the redshift to a reduction in the depolarization shift as the excited subband becomes populated.

}, isbn = {0031-9007}, doi = {10.1103/PhysRevLett.76.2382}, author = {Craig, K. and Galdrikian, B. and Heyman, J. N. and Markelz, A. G. and Williams, J. B. and Sherwin, M. S. and Campman, K. and Hopkins, P. F. and Gossard, A. C.} } @article {272, title = {NONLINEAR QUANTUM DYNAMICS IN SEMICONDUCTOR QUANTUM-WELLS}, journal = {Physica D-Nonlinear Phenomena}, volume = {83}, number = {1-3}, year = {1995}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
14th Annual International Conference of the Center-for-Nonlinear-Studies - Quantum Complexity in Mesoscopic Systems
May 16-20, 1994
Los alamos, nm
Ctr nonlinear studies
34}, month = {May 15}, pages = {229-242}, abstract = {

We discuss recent measurements of the nonlinear response of electrons in wide quantum wells driven by intense electromagnetic radiation at terahertz frequencies. The theme is the interplay of quantum mechanics, strong periodic driving, the electron-electron interaction and dissipation. We discuss harmonic generation from an asymmetric double quantum well in which the effects of dynamic screening are important. Measurements and theory are found to be in good agreement. We also discuss intensity-dependent absorption in a 400 Angstrom square quantum well. A new nonlinear quantum effect occurs, in which the frequency at which electromagnetic radiation is absorbed shifts to the red with increasing intensity. The preliminary experimental results are in agreement with a theory by Zaluzny, in which the source of the nonlinearity is the self-consistent potential in the Hartree approximation for the electron dynamics.

}, isbn = {0167-2789}, doi = {10.1016/0167-2789(94)00266-S}, author = {Sherwin, M. S. and Craig, K. and Galdrikian, B. and Heyman, J. and Markelz, A. and Campman, K. and Fafard, S. and Hopkins, P. F. and Gossard, A.} } @article {262, title = {QUENCHING OF EXCITONIC QUANTUM-WELL PHOTOLUMINESCENCE BY INTENSE FAR-INFRARED RADIATION - FREE-CARRIER HEATING}, journal = {Physical Review B}, volume = {51}, number = {8}, year = {1995}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
29}, month = {Feb 15}, pages = {5253-5262}, isbn = {0163-1829}, doi = {10.1103/PhysRevB.51.5253}, author = {Cerne, J. and Markelz, A. G. and Sherwin, M. S. and Allen, S. J. and Sundaram, M. and Gossard, A. C. and Vanson, P. C. and Bimberg, D.} } @article {259, title = {RESONANT-ENERGY RELAXATION OF TERAHERTZ-DRIVEN 2-DIMENSIONAL ELECTRON GASES}, journal = {Physical Review B}, volume = {51}, number = {24}, year = {1995}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
119}, month = {Jun 15}, pages = {18041-18044}, isbn = {0163-1829}, doi = {10.1103/PhysRevB.51.18041}, author = {Asmar, N. G. and Markelz, A. G. and Gwinn, E. G. and Cerne, J. and Sherwin, M. S. and Campman, K. L. and Hopkins, P. F. and Gossard, A. C.} } @proceedings {319, title = {Far-infrared harmonic generation from semiconductor heterostructures}, volume = {1854}, year = {1994}, pages = {48-55}, author = {Markelz, A.G. and Gwinn, E. G. and Sherwin, M. S. and Heyman, J. N. and Nguyen, C. and Kroemer, H.} } @article {264, title = {FAR-INFRARED SATURATION SPECTROSCOPY OF A SINGLE SQUARE-WELL}, journal = {Semiconductor Science and Technology}, volume = {9}, number = {5}, year = {1994}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
S
8th International Conference on Hot Carriers in Semiconductors
Aug 16-20, 1993
Oxford univ, oxford, england
Sci \& engn res council; royal soc; brit council; oxford univ
31}, month = {May}, pages = {627-629}, abstract = {

We have performed saturation spectroscopy measurements of the lowest intersubband transition in a single 400 angstrom GaAs/Al0.3Ga0.7As modulation-doped square quantum well. We couple intense tunable far-infrared radiation from the Santa Barbara free electron laser into our sample using an edge-coupling technique and measure absorption as a function of frequency and intensity. Saturation and frequency shifts in the absorption line are clearly observed. We attribute the frequency shifts to reductions in the many-body depolarization shift. From our preliminary measurements, we estimate the intersubband relaxation time to be 600 ps to within a factor of three.

}, isbn = {0268-1242}, doi = {10.1088/0268-1242/9/5S/061}, author = {Craig, K. and Felix, C. L. and Heyman, J. N. and Markelz, A. G. and Sherwin, M. S. and Campman, K. L. and Hopkins, P. F. and Gossard, A. C.} } @article {269, title = {GIANT 3RD-ORDER NONLINEAR SUSCEPTIBILITIES FOR INPLANE FAR-INFRARED EXCITATION OF SINGLE INAS QUANTUM-WELLS}, journal = {Solid-State Electronics}, volume = {37}, number = {4-6}, year = {1994}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
6th International Conference on Modulated Semiconductor Structures
Aug 23-27, 1993
Garmisch partenkir, germany
Tech univ munchen, walter schottky inst
9}, month = {Apr-Jun}, pages = {1243-1245}, abstract = {

Third-order, free-carrier nonlinear susceptibilities, chi(3), have been measured between 19 and 23 cm-1 for three InAs/AlSb quantum wells with sheet densities between 2.5 x 10(12) cm-2 and 8 x 10(12) cm-2. We find that these wells are strongly nonlinear at far-infrared frequencies: odd harmonics ninth order have been observed at high incident intensities, and the peak value of chi(3) reaches approximately 1 esu. This is several orders of magnitude larger than previously reported values for chi(3) in bulk n-GaAs (10(-4) esu)[1] and in polyacetylene (10(-7) esu)[2]. The large magnitude of chi(3) is attributed to the high carrier density in the InAs wells, and to the strong non-parabolicity of the conduction band in InAs. However, the free-carrier chi(3) for bulk InAs predicts a density-dependence different from that observed, and the measured decrease in chi(3) with increasing intensity indicates non-perturbative response. We find that the anisotropy of chi(3) displays the expected 4-fold symmetry.

}, isbn = {0038-1101}, doi = {10.1016/0038-1101(94)90399-9}, author = {Markelz, A. G. and Gwinn, E. G. and Sherwin, M. S. and Nguyen, C. and Kroemer, H.} } @article {257, title = {PROBING TERAHERTZ DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH UCSB FREE-ELECTRON LASERS}, journal = {Journal of Luminescence}, volume = {60-1}, year = {1994}, note = {Sherwin, Mark S/Q-4762-2017; Guimaraes, Paulo Sergio Soares/B-6918-2012
Sherwin, Mark S/0000-0002-3869-1893; Guimaraes, Paulo Sergio Soares/0000-0002-0113-2641; Markelz, Andrea/0000-0003-0443-4319
1993 International Conference on Luminescence (ICL 93)
Aug 09-13, 1993
Univ connecticut, storrs, ct
Univ connecticut; opt soc amer; amer phys soc; ieee, laser \& electro opt soc; int union pure \& appl phys; int sci fdn; univ connecticut res fdn
3}, month = {Apr}, pages = {250-255}, abstract = {

The UCSB free-electron lasers provide kilowatts of continuously tunable radiation from 120 GHz to 4.8 THz. They have the most impact on terahertz science and technology that require a tunable, high power source to explore non-linear dynamics or that sacrifice incident power to recover the linear response of systems with very small cross-section. We describe three experiments that demonstrate the utility of these lasers in experiments on the terahertz dynamics of semiconductor nanostructures: (i) terahertz dynamics of resonant tunneling diodes, (ii) saturation spectroscopy of quantum wells and (iii) photon-assisted tunneling in superlattices.

}, isbn = {0022-2313}, doi = {10.1016/0022-2313(94)90142-2}, author = {Allen, S. J. and Craig, K. and Felix, C. L. and Guimaraes, P. and Heyman, J. N. and Kaminski, J. P. and Keay, B. J. and Markelz, A. G. and Ramian, G. and Scott, J. S. and Sherwin, M. S. and Campman, K. L. and Hopkins, P. F. and Gossard, A. C. and Chow, D. and Lui, M. and Liu, T. Y.} } @article {267, title = {SUBCUBIC POWER DEPENDENCE OF 3RD-HARMONIC GENERATION FOR INPLANE, FAR-INFRARED EXCITATION OF INAS QUANTUM-WELLS}, journal = {Semiconductor Science and Technology}, volume = {9}, number = {5}, year = {1994}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
S
8th International Conference on Hot Carriers in Semiconductors
Aug 16-20, 1993
Oxford univ, oxford, england
Sci \& engn res council; royal soc; brit council; oxford univ
4}, month = {May}, pages = {634-637}, abstract = {

Large third-order, free-carrier nonlinear susceptibilities, chi(3) (to approximately 0.2 esu), and subcubic dependence of the third-harmonic power on the incident intensity, have been observed between 19 cm-1 and 23 cm-1 for InAs/AlSb quantum wells with electron sheet densities between 2.5 x 10(12) cm-2 and 8 X 10(12) cm-2. We find that the transmission of the fundamental, and the samples{\textquoteright} DC conductivity, decrease with increasing incident intensity, indicating a large rise in the scattering rate. Using the intensity-dependent transmission to account for absorption in the sample is not sufficient to recover a cubic power law for the third-harmonic intensity. In addition, given the increased scattering rate indicated by the conductivity data, the bulk free-carrier chi(3) due to non-parabolicity should decrease dramatically with increasing fundamental intensity, contrary to our results. Thus, non-parabolicity alone cannot account for the observed third-harmonic response.

}, isbn = {0268-1242}, doi = {https://doi.org/10.1088/0268-1242/9/5S/063}, author = {Markelz, A. G. and Asmar, N. G. and Gwinn, E. G. and Sherwin, M. S. and Nguyen, C. and Kroemer, H.} } @proceedings {320, title = {Far-infrared nonlinear response of electrons in semiconductor nanostructures}, volume = {1854}, year = {1993}, pages = {36-47}, author = {Sherwin, M. S. and Asmar, N. G. and Bewley, W. W. and Craig, K. and Felix, C. L. and Galdrikian, B. and Gwinn, E. G. and Markelz, A.G. and Gossard, A. C. and Hopkins, P. F. and Sundaram, M. and Birnir, B.} }