@article {243,
title = {Terahertz response of quantum point contacts},
journal = {Applied Physics LettersApplied Physics LettersApplied Physics Letters},
volume = {92},
number = {22},
year = {2008},
note = {ISI Document Delivery No.: 310KL
Times Cited: 25
Cited Reference Count: 21
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Song, J. W. Kabir, N. A. Kawano, Y. Ishibashi, K. Aizin, G. R. Mourokh, L. Reno, J. L. Markelz, A. G. Bird, J. P.
Ishibashi, Koji/G-7065-2012; Bird, Jonathan P/G-4068-2010
Ishibashi, Koji/0000-0001-8131-9969; Bird, Jonathan P/0000-0002-6966-9007; Markelz, Andrea/0000-0003-0443-4319
27
6
Amer inst physics
Melville
1077-3118},
month = {Jun},
pages = {3},
type = {Article},
abstract = {
We measure a clear terahertz response in the low-temperature conductance of a quantum point contact at 1.4 and 2.5 THz. We show that this photoresponse does not arise from a heating effect, but that it is instead excellently described by a classical model of terahertz-induced gate-voltage rectification. This effect is distinct from the rectification mechanisms that have been studied previously, being determined by the phase-dependent interference of the source drain and gate voltage modulations induced by the terahertz field. (C) 2008 American Institute of Physics.
}, keywords = {detector, devices, field-effect transistors, Physics, plasma-waves, radiation, resonant detection, subterahertz, transport}, isbn = {0003-6951}, doi = {https://doi.org/10.1063/1.2938416}, author = {Song, J. W. and Kabir, N. A. and Kawano, Y. and Ishibashi, K. and Aizin, G. R. and Mourokh, L. and Reno, J. L. and Markelz, A. G. and Bird, J. P.} } @article {229, title = {Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems}, journal = {Applied Physics Letters}, volume = {89}, number = {13}, year = {2006}, note = {ISI Document Delivery No.: 089JEFrequency-dependent complex conductivity of high-mobility GaAs and InAs two-dimensional-electron-gas (2DEG) systems is studied by terahertz time domain spectroscopy. Determining the momentum relaxation time from a Drude model, the authors find a lower value than that from dc measurements, particularly at high frequencies/low temperatures. These deviations are consistent with the ratio tau(t)/tau(q,) where tau(q) is the full scattering time. This suggests that small-angle scattering leads to weaker heating of 2DEGs at low temperatures than expected from dc mobilit9y. (c) 2006 American Institute of Physics.
}, keywords = {field-effect transistors, photoconductivity, Physics, plasma-waves, radiation, resonant detection, subterahertz}, isbn = {0003-6951}, doi = {10.1063/1.2357605}, author = {Kabir, N. A. and Yoon, Y. and Knab, J. R. and Chen, J. Y. and Markelz, A. G. and Reno, J. L. and Sadofyev, Y. and Johnson, S. and Zhang, Y. H. and Bird, J. P.} }