01241nas a2200229 4500008004500000020001400045245009400059210006900153260000800222300001400230490000700244520056400251653001100815653001500826653001200841653001100853653002700864653003000891100002000921700002100941856004900962 1998 Engldsh a0003-695100aTemperature-dependent terahertz output from semi-insulating GaAs photoconductive switches0 aTemperaturedependent terahertz output from semiinsulating GaAs p cMay a2229-22310 v723 a
The temperature dependence of the terahertz (THz) output power and spectra from biased photoconductive switches was measured for several antenna gap widths and applied biases. The spectrally integrated THz output had a nonmonotonic temperature dependence in all cases with the value increasing by a factor of 3 from room temperature to 150 K for low biases and 100 K at high biases. An abrupt decrease in output power occurs below 90 K, and the spectrum shifts to lower frequencies as the temperature is lowered. (C) 1998 American Institute of Physics.
10adomain10ageneration10aPhysics10apulses10asemiconductor surfaces10atransmission spectroscopy1 aMarkelz, A., G.1 aHeilweil, E., J. uhttps://markelz.physics.buffalo.edu/node/270