01364nas a2200253 4500008004500000020001400045245008300059210006900142260000800211300001400219490000700233520064600240653001100886653002800897653002800925653001200953653001500965653001200980100002000992700001801012700001301030700001801043856004901061 1996 Engldsh a0003-695100aInterband impact ionization by terahertz illumination of InAs heterostructures0 aInterband impact ionization by terahertz illumination of InAs he cDec a3975-39770 v693 a
Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which omega tau(m) similar to 1, where tau(m) is the momentum relaxation time, and f=omega/2 pi is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz. (C) 1996 American Institute of Physics.
10aenergy10afar-infrared excitation10ainas/alsb quantum-wells10ainplane10amodulation10aPhysics1 aMarkelz, A., G.1 aAsmar, N., G.1 aBrar, B.1 aGwinn, E., G. uhttps://markelz.physics.buffalo.edu/node/26600528nas a2200157 4500008004100000245010600041210006900147260001200216300001400228100001800242700001400260700001800274700001300292700001600305856004900321 1994 eng d00aFrequency Dependence of the Third Order Susceptibility of InAs Quantum Wells at Terahertz Frequencies0 aFrequency Dependence of the Third Order Susceptibility of InAs Q c08/1994 a1193-11961 aMarkelz, A.G.1 aCerne, J.1 aGwinn, E., G.1 aBrar, B.1 aKroemer, H. uhttps://markelz.physics.buffalo.edu/node/318