We have experimentally measured the 1-2 intersubband absorption in a single 40 nm wide modulation-doped Al0.3Ga0.7As/GaAs square quantum well as a function of frequency, intensity, and charge density. The low-intensity depolarization-shifted absorption occurs near 80 cm(-1) (10 meV or 2.4 THz), nearly 30% higher than the intersubband spacing. At higher intensities, the absorption peak shifts to lower frequencies. Our data are in good agreement with a theory proposed by Zaluzny, which attributes the redshift to a reduction in the depolarization shift as the excited subband becomes populated.

1 aCraig, K.1 aGaldrikian, B.1 aHeyman, J., N.1 aMarkelz, A., G.1 aWilliams, J., B.1 aSherwin, M., S.1 aCampman, K.1 aHopkins, P., F.1 aGossard, A., C. uhttp://markelz.physics.buffalo.edu/node/26501582nas a2200241 4500008004100000020001400041245006200055210006100117260001100178300001200189490000700201520093300208100002001141700001401161700001901175700001501194700001601209700001601225700001501241700002001256700001601276856004801292 1995 eng d a0167-278900aNONLINEAR QUANTUM DYNAMICS IN SEMICONDUCTOR QUANTUM-WELLS0 aNONLINEAR QUANTUM DYNAMICS IN SEMICONDUCTOR QUANTUMWELLS cMay 15 a229-2420 v833 aWe discuss recent measurements of the nonlinear response of electrons in wide quantum wells driven by intense electromagnetic radiation at terahertz frequencies. The theme is the interplay of quantum mechanics, strong periodic driving, the electron-electron interaction and dissipation. We discuss harmonic generation from an asymmetric double quantum well in which the effects of dynamic screening are important. Measurements and theory are found to be in good agreement. We also discuss intensity-dependent absorption in a 400 Angstrom square quantum well. A new nonlinear quantum effect occurs, in which the frequency at which electromagnetic radiation is absorbed shifts to the red with increasing intensity. The preliminary experimental results are in agreement with a theory by Zaluzny, in which the source of the nonlinearity is the self-consistent potential in the Hartree approximation for the electron dynamics.

1 aSherwin, M., S.1 aCraig, K.1 aGaldrikian, B.1 aHeyman, J.1 aMarkelz, A.1 aCampman, K.1 aFafard, S.1 aHopkins, P., F.1 aGossard, A. uhttp://markelz.physics.buffalo.edu/node/27200716nas a2200241 4500008004100000245008100041210006900122300001000191490000900201100002000210700001800230700001900248700001400267700001800281700001900299700001800318700001800336700002000354700002000374700001700394700001500411856004800426 1993 eng d00aFar-infrared nonlinear response of electrons in semiconductor nanostructures0 aFarinfrared nonlinear response of electrons in semiconductor nan a36-470 v18541 aSherwin, M., S.1 aAsmar, N., G.1 aBewley, W., W.1 aCraig, K.1 aFelix, C., L.1 aGaldrikian, B.1 aGwinn, E., G.1 aMarkelz, A.G.1 aGossard, A., C.1 aHopkins, P., F.1 aSundaram, M.1 aBirnir, B. uhttp://markelz.physics.buffalo.edu/node/320