01316nas a2200229 4500008004100000020001400041245006500055210006300120260000800183300001200191490000600203520067700209100001400886700001800900700001900918700002000937700002000957700002000977700002000997700002001017856004901037 1994 eng d a0268-124200aFAR-INFRARED SATURATION SPECTROSCOPY OF A SINGLE SQUARE-WELL0 aFARINFRARED SATURATION SPECTROSCOPY OF A SINGLE SQUAREWELL cMay a627-6290 v93 a
We have performed saturation spectroscopy measurements of the lowest intersubband transition in a single 400 angstrom GaAs/Al0.3Ga0.7As modulation-doped square quantum well. We couple intense tunable far-infrared radiation from the Santa Barbara free electron laser into our sample using an edge-coupling technique and measure absorption as a function of frequency and intensity. Saturation and frequency shifts in the absorption line are clearly observed. We attribute the frequency shifts to reductions in the many-body depolarization shift. From our preliminary measurements, we estimate the intersubband relaxation time to be 600 ps to within a factor of three.
1 aCraig, K.1 aFelix, C., L.1 aHeyman, J., N.1 aMarkelz, A., G.1 aSherwin, M., S.1 aCampman, K., L.1 aHopkins, P., F.1 aGossard, A., C. uhttps://markelz.physics.buffalo.edu/node/26400717nas a2200241 4500008004100000245008100041210006900122300001000191490000900201100002000210700001800230700001900248700001400267700001800281700001900299700001800318700001800336700002000354700002000374700001700394700001500411856004900426 1993 eng d00aFar-infrared nonlinear response of electrons in semiconductor nanostructures0 aFarinfrared nonlinear response of electrons in semiconductor nan a36-470 v18541 aSherwin, M., S.1 aAsmar, N., G.1 aBewley, W., W.1 aCraig, K.1 aFelix, C., L.1 aGaldrikian, B.1 aGwinn, E., G.1 aMarkelz, A.G.1 aGossard, A., C.1 aHopkins, P., F.1 aSundaram, M.1 aBirnir, B. uhttps://markelz.physics.buffalo.edu/node/320