01594nas a2200337 4500008004100000020001400041245009400055210006900149260000800218300001200226490000900238520066100247100001800908700001400926700001800940700001800958700001900976700002100995700001701016700002001033700001501053700001801068700002001086700002001106700002001126700002001146700001301166700001201179700001601191856004901207 1994 eng d a0022-231300aPROBING TERAHERTZ DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH UCSB FREE-ELECTRON LASERS0 aPROBING TERAHERTZ DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH cApr a250-2550 v60-13 a
The UCSB free-electron lasers provide kilowatts of continuously tunable radiation from 120 GHz to 4.8 THz. They have the most impact on terahertz science and technology that require a tunable, high power source to explore non-linear dynamics or that sacrifice incident power to recover the linear response of systems with very small cross-section. We describe three experiments that demonstrate the utility of these lasers in experiments on the terahertz dynamics of semiconductor nanostructures: (i) terahertz dynamics of resonant tunneling diodes, (ii) saturation spectroscopy of quantum wells and (iii) photon-assisted tunneling in superlattices.
1 aAllen, S., J.1 aCraig, K.1 aFelix, C., L.1 aGuimaraes, P.1 aHeyman, J., N.1 aKaminski, J., P.1 aKeay, B., J.1 aMarkelz, A., G.1 aRamian, G.1 aScott, J., S.1 aSherwin, M., S.1 aCampman, K., L.1 aHopkins, P., F.1 aGossard, A., C.1 aChow, D.1 aLui, M.1 aLiu, T., Y. uhttps://markelz.physics.buffalo.edu/node/257