01467nas a2200349 4500008004500000020001400045245004900059210004900108260000800157300000600165490000700171520058300178653001300761653001200774653002900786653001200815653001700827653001400844653002300858653001700881653001400898100001700912700001800929700001500947700001800962700001800980700001600998700001701014700002001031700001701051856004901068 2008 Engldsh a0003-695100aTerahertz response of quantum point contacts0 aTerahertz response of quantum point contacts cJun a30 v923 a
We measure a clear terahertz response in the low-temperature conductance of a quantum point contact at 1.4 and 2.5 THz. We show that this photoresponse does not arise from a heating effect, but that it is instead excellently described by a classical model of terahertz-induced gate-voltage rectification. This effect is distinct from the rectification mechanisms that have been studied previously, being determined by the phase-dependent interference of the source drain and gate voltage modulations induced by the terahertz field. (C) 2008 American Institute of Physics.
10adetector10adevices10afield-effect transistors10aPhysics10aplasma-waves10aradiation10aresonant detection10asubterahertz10atransport1 aSong, J., W.1 aKabir, N., A.1 aKawano, Y.1 aIshibashi, K.1 aAizin, G., R.1 aMourokh, L.1 aReno, J., L.1 aMarkelz, A., G.1 aBird, J., P. uhttps://markelz.physics.buffalo.edu/node/243