TY - JOUR T1 - PROBING TERAHERTZ DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH UCSB FREE-ELECTRON LASERS JF - Journal of Luminescence Y1 - 1994 A1 - Allen, S. J. A1 - Craig, K. A1 - Felix, C. L. A1 - Guimaraes, P. A1 - Heyman, J. N. A1 - Kaminski, J. P. A1 - Keay, B. J. A1 - Markelz, A. G. A1 - Ramian, G. A1 - Scott, J. S. A1 - Sherwin, M. S. A1 - Campman, K. L. A1 - Hopkins, P. F. A1 - Gossard, A. C. A1 - Chow, D. A1 - Lui, M. A1 - Liu, T. Y. AB -

The UCSB free-electron lasers provide kilowatts of continuously tunable radiation from 120 GHz to 4.8 THz. They have the most impact on terahertz science and technology that require a tunable, high power source to explore non-linear dynamics or that sacrifice incident power to recover the linear response of systems with very small cross-section. We describe three experiments that demonstrate the utility of these lasers in experiments on the terahertz dynamics of semiconductor nanostructures: (i) terahertz dynamics of resonant tunneling diodes, (ii) saturation spectroscopy of quantum wells and (iii) photon-assisted tunneling in superlattices.

VL - 60-1 SN - 0022-2313 N1 - Sherwin, Mark S/Q-4762-2017; Guimaraes, Paulo Sergio Soares/B-6918-2012
Sherwin, Mark S/0000-0002-3869-1893; Guimaraes, Paulo Sergio Soares/0000-0002-0113-2641; Markelz, Andrea/0000-0003-0443-4319
1993 International Conference on Luminescence (ICL 93)
Aug 09-13, 1993
Univ connecticut, storrs, ct
Univ connecticut; opt soc amer; amer phys soc; ieee, laser & electro opt soc; int union pure & appl phys; int sci fdn; univ connecticut res fdn
3 ER -