TY - JOUR T1 - Interband impact ionization by terahertz illumination of InAs heterostructures JF - Applied Physics Letters Y1 - 1996 A1 - Markelz, A. G. A1 - Asmar, N. G. A1 - Brar, B. A1 - Gwinn, E. G. KW - energy KW - far-infrared excitation KW - inas/alsb quantum-wells KW - inplane KW - modulation KW - Physics AB -

Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which omega tau(m) similar to 1, where tau(m) is the momentum relaxation time, and f=omega/2 pi is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz. (C) 1996 American Institute of Physics.

VL - 69 SN - 0003-6951 N1 - ISI Document Delivery No.: VY894
Times Cited: 91
Cited Reference Count: 17
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Markelz, AG Asmar, NG Brar, B Gwinn, EG
Markelz, Andrea/0000-0003-0443-4319
92

6
Amer inst physics
Melville
1077-3118 JO - Appl. Phys. Lett.Appl. Phys. Lett. ER -