TY - JOUR T1 - Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches JF - Applied Physics Letters Y1 - 1998 A1 - Markelz, A. G. A1 - Heilweil, E. J. KW - domain KW - generation KW - Physics KW - pulses KW - semiconductor surfaces KW - transmission spectroscopy AB -

The temperature dependence of the terahertz (THz) output power and spectra from biased photoconductive switches was measured for several antenna gap widths and applied biases. The spectrally integrated THz output had a nonmonotonic temperature dependence in all cases with the value increasing by a factor of 3 from room temperature to 150 K for low biases and 100 K at high biases. An abrupt decrease in output power occurs below 90 K, and the spectrum shifts to lower frequencies as the temperature is lowered. (C) 1998 American Institute of Physics.

VL - 72 SN - 0003-6951 N1 - ISI Document Delivery No.: ZK775
Times Cited: 22
Cited Reference Count: 21
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Markelz, AG Heilweil, EJ
Markelz, Andrea/0000-0003-0443-4319
22

6
Amer inst physics
Woodbury JO - Appl. Phys. Lett.Appl. Phys. Lett. ER -