%0 Journal Article %J Journal of Luminescence %D 1994 %T PROBING TERAHERTZ DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH UCSB FREE-ELECTRON LASERS %A Allen, S. J. %A Craig, K. %A Felix, C. L. %A Guimaraes, P. %A Heyman, J. N. %A Kaminski, J. P. %A Keay, B. J. %A Markelz, A. G. %A Ramian, G. %A Scott, J. S. %A Sherwin, M. S. %A Campman, K. L. %A Hopkins, P. F. %A Gossard, A. C. %A Chow, D. %A Lui, M. %A Liu, T. Y. %X

The UCSB free-electron lasers provide kilowatts of continuously tunable radiation from 120 GHz to 4.8 THz. They have the most impact on terahertz science and technology that require a tunable, high power source to explore non-linear dynamics or that sacrifice incident power to recover the linear response of systems with very small cross-section. We describe three experiments that demonstrate the utility of these lasers in experiments on the terahertz dynamics of semiconductor nanostructures: (i) terahertz dynamics of resonant tunneling diodes, (ii) saturation spectroscopy of quantum wells and (iii) photon-assisted tunneling in superlattices.

%B Journal of Luminescence %V 60-1 %P 250-255 %8 Apr %@ 0022-2313 %G eng %M WOS:A1994NR36100065 %R 10.1016/0022-2313(94)90142-2