@article {260, title = {DC TRANSPORT IN INTENSE, INPLANE TERAHERTZ ELECTRIC-FIELDS IN AL(X)GA(1-X)AS HETEROSTRUCTURES AT 300-K}, journal = {Solid-State Electronics}, volume = {37}, number = {4-6}, year = {1994}, note = {Markelz, Andrea/0000-0003-0443-4319
6th International Conference on Modulated Semiconductor Structures
Aug 23-27, 1993
Garmisch partenkir, germany
Tech univ munchen, walter schottky inst
1}, month = {Apr-Jun}, pages = {693-695}, abstract = {

We report 300 K studies of the dependence of the in-plane, d.c. conductivity, sigma(d.c.) (E(omega)), of a quasi 2D electron gas on the amplitude E(omega) and frequency of intense, far-infrared fields (omega/2pi = 0.24-3.5 THz). We measure sigma(d.c.) (E(omega) parallel-to E(d.c.)), where E(d.c.) is a small sensing field, and observe a monotonic decrease in sigma(d.c.) with increasing E(omega). Although a simple scaling ansatz collapses the measured sigma(d.c.) (E(omega)) data onto a single curve for frequencies from 0.25-3.45 THz (at low to moderate scaled fields), the decrease in conductivity is substantially more rapid than expected from comparison to similar data taken by Masselink et al. [Solid-St. Electron. 31, 337 (1988)] at 35 GHz. We tentatively attribute this difference to effects of a high-frequency modulation in the electron temperature.

}, isbn = {0038-1101}, doi = {10.1016/0038-1101(94)90278-X}, author = {Asmar, N. G. and Markelz, A. G. and Gwinn, E. G. and Hopkins, P. F. and Gossard, A. C.} }