@article {270, title = {Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches}, journal = {Applied Physics Letters}, volume = {72}, number = {18}, year = {1998}, note = {ISI Document Delivery No.: ZK775
Times Cited: 22
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Markelz, AG Heilweil, EJ
Markelz, Andrea/0000-0003-0443-4319
22

6
Amer inst physics
Woodbury}, month = {May}, pages = {2229-2231}, type = {Article}, abstract = {

The temperature dependence of the terahertz (THz) output power and spectra from biased photoconductive switches was measured for several antenna gap widths and applied biases. The spectrally integrated THz output had a nonmonotonic temperature dependence in all cases with the value increasing by a factor of 3 from room temperature to 150 K for low biases and 100 K at high biases. An abrupt decrease in output power occurs below 90 K, and the spectrum shifts to lower frequencies as the temperature is lowered. (C) 1998 American Institute of Physics.

}, keywords = {domain, generation, Physics, pulses, semiconductor surfaces, transmission spectroscopy}, isbn = {0003-6951}, doi = {10.1063/1.121329}, author = {Markelz, A. G. and Heilweil, E. J.} }