@article {297, title = {Relaxation times in InAs/AlSb quantum wells }, journal = {Applied Physics Letters}, volume = {72}, year = {1998}, chapter = {2439}, doi = {10.1063/1.121377}, url = {https://aip.scitation.org/doi/abs/10.1063/1.121377}, author = {Markelz, A. G. and Asmar, N. G. and Gwinn, E. G.} } @article {266, title = {Interband impact ionization by terahertz illumination of InAs heterostructures}, journal = {Applied Physics Letters}, volume = {69}, number = {26}, year = {1996}, note = {ISI Document Delivery No.: VY894
Times Cited: 91
Cited Reference Count: 17
Cited References:
ASMAR NG, 1995, PHYS REV B, V51, P18041, DOI 10.1103/PhysRevB.51.18041
Asmar NG, 1996, APPL PHYS LETT, V68, P829, DOI 10.1063/1.116547
BAIER HU, 1986, SOLID STATE COMMUN, V58, P327, DOI 10.1016/0038-1098(86)90094-3
BLOEMBER.N, 1974, IEEE J QUANTUM ELECT, VQE10, P375, DOI 10.1109/JQE.1974.1068132
BOLOGNESI CR, 1994, IEEE ELECTR DEVICE L, V15, P16, DOI 10.1109/55.289476
CERNE J, 1995, PHYS REV B, V51, P5253, DOI 10.1103/PhysRevB.51.5253
GANICHEV SD, 1986, ZH EKSP TEOR FIZ+, V90, P445
GAUER C, 1994, SEMICOND SCI TECH, V9, P1580, DOI 10.1088/0268-1242/9/9/002
Kochman B, 1996, APPL PHYS LETT, V68, P1936, DOI 10.1063/1.115631
MARKELZ AG, 1994, SOLID STATE ELECTRON, V37, P1243, DOI 10.1016/0038-1101(94)90399-9
MARKELZ AG, 1994, SEMICOND SCI TECH, V9, P634, DOI 10.1088/0268-1242/9/5S/063
NGUYEN C, 1993, J VAC SCI TECHNOL B, V11, P1706, DOI 10.1116/1.586509
NGUYEN C, 1993, J ELECTRON MATER, V22, P255, DOI 10.1007/BF02665035
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Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990
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XIE H, 1994, J APPL PHYS, V76, P92, DOI 10.1063/1.357065
Markelz, AG Asmar, NG Brar, B Gwinn, EG
Markelz, Andrea/0000-0003-0443-4319
92

6
Amer inst physics
Melville
1077-3118}, month = {Dec}, pages = {3975-3977}, type = {Article}, abstract = {

Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which omega tau(m) similar to 1, where tau(m) is the momentum relaxation time, and f=omega/2 pi is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz. (C) 1996 American Institute of Physics.

}, keywords = {energy, far-infrared excitation, inas/alsb quantum-wells, inplane, modulation, Physics}, isbn = {0003-6951}, doi = {10.1063/1.117842}, author = {Markelz, A. G. and Asmar, N. G. and Brar, B. and Gwinn, E. G.} } @article {258, title = {Temperature of quasi-two-dimensional electron gases under steady-state terahertz drive}, journal = {Applied Physics Letters}, volume = {68}, number = {6}, year = {1996}, note = {ISI Document Delivery No.: TT663
Times Cited: 59
Cited Reference Count: 12
Cited References:
ASMAR NG, 1995, PHYS REV B, V51, P18041, DOI 10.1103/PhysRevB.51.18041
BETHUNE DS, 1989, J OPT SOC AM B, V6, P910, DOI 10.1364/JOSAB.6.000910
CERNE J, 1995, PHYS REV B, V51, P5253, DOI 10.1103/PhysRevB.51.5253
CONWELL E, 1967, SOLID STATE PHYS S, V9
GUPTA R, 1992, PHYS REV B, V46, P7745, DOI 10.1103/PhysRevB.46.7745
HEYMAN JN, 1994, PHYS REV LETT, V72, P2183, DOI 10.1103/PhysRevLett.72.2183
KOMIYAMA S, 1985, PHYS REV B, V32, P5532, DOI 10.1103/PhysRevB.32.5532
MARKELZ AG, 1994, SOLID STATE ELECTRON, V37, P1243, DOI 10.1016/0038-1101(94)90399-9
MARKELZ AG, 1995, THESIS U CALIFORNIA
SHAH J, 1984, APPL PHYS LETT, V44, P322, DOI 10.1063/1.94739
SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2
YANG CH, 1985, PHYS REV LETT, V55, P2359, DOI 10.1103/PhysRevLett.55.2359
Asmar, NG Cerne, J Markelz, AG Gwinn, EG Sherwin, MS Campman, KL Gossard, AC
Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
59

7
Amer inst physics
Woodbury}, month = {Feb}, pages = {829-831}, type = {Article}, abstract = {

We use photoluminescence to study the time-average energy distribution of electrons in the presence of strong steady-state drive at terahertz (THz) frequencies, in a modulation-doped 125 Angstrom AlGaAs/GaAs square well that is held at low lattice temperature TL. We find that the energy distribution can be characterized by an effective electron temperature, T-e(\>T-L), that agrees well with values estimated from the THz-illuminated, dc conductivity. This agreement indicates that under strong THz drive, LO phonon scattering dominates both energy and momentum relaxation; that the carrier distribution maintains a heated, thermal form; and that phonon drift effects are negligible. (C) 1996 American Institute of Physics.

}, keywords = {hot-electrons, Physics}, isbn = {0003-6951}, doi = {10.1063/1.116547}, author = {Asmar, N. G. and Cerne, J. and Markelz, A. G. and Gwinn, E. G. and Sherwin, M. S. and Campman, K. L. and Gossard, A. C.} } @article {259, title = {RESONANT-ENERGY RELAXATION OF TERAHERTZ-DRIVEN 2-DIMENSIONAL ELECTRON GASES}, journal = {Physical Review B}, volume = {51}, number = {24}, year = {1995}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
119}, month = {Jun 15}, pages = {18041-18044}, isbn = {0163-1829}, doi = {10.1103/PhysRevB.51.18041}, author = {Asmar, N. G. and Markelz, A. G. and Gwinn, E. G. and Cerne, J. and Sherwin, M. S. and Campman, K. L. and Hopkins, P. F. and Gossard, A. C.} } @article {260, title = {DC TRANSPORT IN INTENSE, INPLANE TERAHERTZ ELECTRIC-FIELDS IN AL(X)GA(1-X)AS HETEROSTRUCTURES AT 300-K}, journal = {Solid-State Electronics}, volume = {37}, number = {4-6}, year = {1994}, note = {Markelz, Andrea/0000-0003-0443-4319
6th International Conference on Modulated Semiconductor Structures
Aug 23-27, 1993
Garmisch partenkir, germany
Tech univ munchen, walter schottky inst
1}, month = {Apr-Jun}, pages = {693-695}, abstract = {

We report 300 K studies of the dependence of the in-plane, d.c. conductivity, sigma(d.c.) (E(omega)), of a quasi 2D electron gas on the amplitude E(omega) and frequency of intense, far-infrared fields (omega/2pi = 0.24-3.5 THz). We measure sigma(d.c.) (E(omega) parallel-to E(d.c.)), where E(d.c.) is a small sensing field, and observe a monotonic decrease in sigma(d.c.) with increasing E(omega). Although a simple scaling ansatz collapses the measured sigma(d.c.) (E(omega)) data onto a single curve for frequencies from 0.25-3.45 THz (at low to moderate scaled fields), the decrease in conductivity is substantially more rapid than expected from comparison to similar data taken by Masselink et al. [Solid-St. Electron. 31, 337 (1988)] at 35 GHz. We tentatively attribute this difference to effects of a high-frequency modulation in the electron temperature.

}, isbn = {0038-1101}, doi = {10.1016/0038-1101(94)90278-X}, author = {Asmar, N. G. and Markelz, A. G. and Gwinn, E. G. and Hopkins, P. F. and Gossard, A. C.} } @article {261, title = {ENERGY RELAXATION AT THZ FREQUENCIES IN ALXGA1-XAS HETEROSTRUCTURES}, journal = {Semiconductor Science and Technology}, volume = {9}, number = {5}, year = {1994}, note = {Markelz, Andrea/0000-0003-0443-4319
S
8th International Conference on Hot Carriers in Semiconductors
Aug 16-20, 1993
Oxford univ, oxford, england
Sci \& engn res council; royal soc; brit council; oxford univ
2}, month = {May}, pages = {828-830}, abstract = {

We report 4.2 K studies of the dependence of the in-plane, DC conductivity of a quasi 2D electron gas on the amplitude E(omega) of applied fields with frequencies from 0.25 THz to 3.5 THz. We analyse the dependence of sigma(DC) on E(omega) assuming that electron-optical phonon scattering dominates energy relaxation, that the absorbed power has a Drude form and that the electron distribution is thermal. This simple analysis is self-consistent: Arrhenius plots of the estimated energy loss rate have a slope near -homega(LO)BAR/k(B) for all frequencies, as expected for energy loss by optical phonon emission. We find that the effective energy relaxation time tau(epsilon) varies with the frequency of the applied field, from tau(epsilon) approximately 4 ps at 0.34 THz to tau(epsilon) approximately 0.3 ps at 3.45 THz. This may indicate a frequency-dependent form for the hot-phonon distribution.

}, isbn = {0268-1242}, doi = {10.1088/0268-1242/9/5S/116}, author = {Asmar, N. G. and Markelz, A. G. and Gwinn, E. G. and Hopkins, P. F. and Gossard, A. C.} } @article {267, title = {SUBCUBIC POWER DEPENDENCE OF 3RD-HARMONIC GENERATION FOR INPLANE, FAR-INFRARED EXCITATION OF INAS QUANTUM-WELLS}, journal = {Semiconductor Science and Technology}, volume = {9}, number = {5}, year = {1994}, note = {Sherwin, Mark S/Q-4762-2017
Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319
S
8th International Conference on Hot Carriers in Semiconductors
Aug 16-20, 1993
Oxford univ, oxford, england
Sci \& engn res council; royal soc; brit council; oxford univ
4}, month = {May}, pages = {634-637}, abstract = {

Large third-order, free-carrier nonlinear susceptibilities, chi(3) (to approximately 0.2 esu), and subcubic dependence of the third-harmonic power on the incident intensity, have been observed between 19 cm-1 and 23 cm-1 for InAs/AlSb quantum wells with electron sheet densities between 2.5 x 10(12) cm-2 and 8 X 10(12) cm-2. We find that the transmission of the fundamental, and the samples{\textquoteright} DC conductivity, decrease with increasing incident intensity, indicating a large rise in the scattering rate. Using the intensity-dependent transmission to account for absorption in the sample is not sufficient to recover a cubic power law for the third-harmonic intensity. In addition, given the increased scattering rate indicated by the conductivity data, the bulk free-carrier chi(3) due to non-parabolicity should decrease dramatically with increasing fundamental intensity, contrary to our results. Thus, non-parabolicity alone cannot account for the observed third-harmonic response.

}, isbn = {0268-1242}, doi = {https://doi.org/10.1088/0268-1242/9/5S/063}, author = {Markelz, A. G. and Asmar, N. G. and Gwinn, E. G. and Sherwin, M. S. and Nguyen, C. and Kroemer, H.} } @proceedings {320, title = {Far-infrared nonlinear response of electrons in semiconductor nanostructures}, volume = {1854}, year = {1993}, pages = {36-47}, author = {Sherwin, M. S. and Asmar, N. G. and Bewley, W. W. and Craig, K. and Felix, C. L. and Galdrikian, B. and Gwinn, E. G. and Markelz, A.G. and Gossard, A. C. and Hopkins, P. F. and Sundaram, M. and Birnir, B.} } @article {281, title = {8 NEW HIGH-TEMPERATURE SUPERCONDUCTORS WITH THE 1-2-4 STRUCTURE}, journal = {Physical Review B}, volume = {39}, number = {10}, year = {1989}, note = {Scheven, Ulrich/D-7582-2013
Markelz, Andrea/0000-0003-0443-4319; Scheven, Ulrich/0000-0001-8111-0081
B
241}, month = {Apr 1}, pages = {7347-7350}, isbn = {0163-1829}, doi = {10.1103/physrevb.39.7347 }, author = {Morris, D. E. and Nickel, J. H. and Wei, J. Y. T. and Asmar, N. G. and Scott, J. S. and Scheven, U. M. and Hultgren, C. T. and Markelz, A. G. and Post, J. E. and Heaney, P. J. and Veblen, D. R. and Hazen, R. M.} } @article {278, title = {OXYGEN CONCENTRATION EFFECT ON TC OF THE BI-CA-SR-CU-O SUPERCONDUCTOR}, journal = {Physical Review B}, volume = {39}, number = {10}, year = {1989}, note = {A
155}, month = {Apr 1}, pages = {6612-6614}, isbn = {0163-1829}, doi = {https://doi.org/10.1103/physrevb.39.6612 }, author = {Morris, D. E. and Hultgren, C. T. and Markelz, A. M. and Wei, J. Y. T. and Asmar, N. G. and Nickel, J. H.} }