@article {229, title = {Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems}, journal = {Applied Physics Letters}, volume = {89}, number = {13}, year = {2006}, note = {ISI Document Delivery No.: 089JE
Times Cited: 18
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Kabir, N. A. Yoon, Y. Knab, J. R. Chen, J. -Y. Markelz, A. G. Reno, J. L. Sadofyev, Y. Johnson, S. Zhang, Y. -H. Bird, J. P.
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Melville}, month = {Sep}, pages = {3}, type = {Article}, abstract = {

Frequency-dependent complex conductivity of high-mobility GaAs and InAs two-dimensional-electron-gas (2DEG) systems is studied by terahertz time domain spectroscopy. Determining the momentum relaxation time from a Drude model, the authors find a lower value than that from dc measurements, particularly at high frequencies/low temperatures. These deviations are consistent with the ratio tau(t)/tau(q,) where tau(q) is the full scattering time. This suggests that small-angle scattering leads to weaker heating of 2DEGs at low temperatures than expected from dc mobilit9y. (c) 2006 American Institute of Physics.

}, keywords = {field-effect transistors, photoconductivity, Physics, plasma-waves, radiation, resonant detection, subterahertz}, isbn = {0003-6951}, doi = {10.1063/1.2357605}, author = {Kabir, N. A. and Yoon, Y. and Knab, J. R. and Chen, J. Y. and Markelz, A. G. and Reno, J. L. and Sadofyev, Y. and Johnson, S. and Zhang, Y. H. and Bird, J. P.} }