@article {266, title = {Interband impact ionization by terahertz illumination of InAs heterostructures}, journal = {Applied Physics Letters}, volume = {69}, number = {26}, year = {1996}, note = {ISI Document Delivery No.: VY894
Times Cited: 91
Cited Reference Count: 17
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Markelz, AG Asmar, NG Brar, B Gwinn, EG
Markelz, Andrea/0000-0003-0443-4319
92

6
Amer inst physics
Melville
1077-3118}, month = {Dec}, pages = {3975-3977}, type = {Article}, abstract = {

Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which omega tau(m) similar to 1, where tau(m) is the momentum relaxation time, and f=omega/2 pi is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz. (C) 1996 American Institute of Physics.

}, keywords = {energy, far-infrared excitation, inas/alsb quantum-wells, inplane, modulation, Physics}, isbn = {0003-6951}, doi = {10.1063/1.117842}, author = {Markelz, A. G. and Asmar, N. G. and Brar, B. and Gwinn, E. G.} }