01624nas a2200193   4500008004100000020001400041245011200055210006900167260001200236300001400248490000700262520102300269100002001292700001801312700002001330700001501350700001601365856004901381       1994                        eng d  a0038-110100aGIANT 3RD-ORDER NONLINEAR SUSCEPTIBILITIES FOR INPLANE FAR-INFRARED EXCITATION OF SINGLE INAS QUANTUM-WELLS0 aGIANT 3RDORDER NONLINEAR SUSCEPTIBILITIES FOR INPLANE FARINFRARE  cApr-Jun  a1243-12450 v373 a<p>Third-order, free-carrier nonlinear susceptibilities, chi(3), have been measured between 19 and 23 cm-1 for three InAs/AlSb quantum wells with sheet densities between 2.5 x 10(12) cm-2 and 8 x 10(12) cm-2. We find that these wells are strongly nonlinear at far-infrared frequencies: odd harmonics ninth order have been observed at high incident intensities, and the peak value of chi(3) reaches approximately 1 esu. This is several orders of magnitude larger than previously reported values for chi(3) in bulk n-GaAs (10(-4) esu)[1] and in polyacetylene (10(-7) esu)[2]. The large magnitude of chi(3) is attributed to the high carrier density in the InAs wells, and to the strong non-parabolicity of the conduction band in InAs. However, the free-carrier chi(3) for bulk InAs predicts a density-dependence different from that observed, and the measured decrease in chi(3) with increasing intensity indicates non-perturbative response. We find that the anisotropy of chi(3) displays the expected 4-fold symmetry.</p>1 aMarkelz, A., G.1 aGwinn, E., G.1 aSherwin, M., S.1 aNguyen, C.1 aKroemer, H.  uhttps://markelz.physics.buffalo.edu/node/269