<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Song, J. W.</style></author><author><style face="normal" font="default" size="100%">Kabir, N. A.</style></author><author><style face="normal" font="default" size="100%">Kawano, Y.</style></author><author><style face="normal" font="default" size="100%">Ishibashi, K.</style></author><author><style face="normal" font="default" size="100%">Aizin, G. R.</style></author><author><style face="normal" font="default" size="100%">Mourokh, L.</style></author><author><style face="normal" font="default" size="100%">Reno, J. L.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Bird, J. P.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Terahertz response of quantum point contacts</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics LettersApplied Physics LettersApplied Physics Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.</style></alt-title><short-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.Appl. Phys. Lett.</style></short-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">detector</style></keyword><keyword><style  face="normal" font="default" size="100%">devices</style></keyword><keyword><style  face="normal" font="default" size="100%">field-effect transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Physics</style></keyword><keyword><style  face="normal" font="default" size="100%">plasma-waves</style></keyword><keyword><style  face="normal" font="default" size="100%">radiation</style></keyword><keyword><style  face="normal" font="default" size="100%">resonant detection</style></keyword><keyword><style  face="normal" font="default" size="100%">subterahertz</style></keyword><keyword><style  face="normal" font="default" size="100%">transport</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2008</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Jun</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">22</style></number><volume><style face="normal" font="default" size="100%">92</style></volume><pages><style face="normal" font="default" size="100%">3</style></pages><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We measure a clear terahertz response in the low-temperature conductance of a quantum point contact at 1.4 and 2.5 THz. We show that this photoresponse does not arise from a heating effect, but that it is instead excellently described by a classical model of terahertz-induced gate-voltage rectification. This effect is distinct from the rectification mechanisms that have been studied previously, being determined by the phase-dependent interference of the source drain and gate voltage modulations induced by the terahertz field. (C) 2008 American Institute of Physics.&lt;/p&gt;</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000256527900083</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: 310KL&lt;br/&gt;Times Cited: 25&lt;br/&gt;Cited Reference Count: 21&lt;br/&gt;Cited References: &lt;br/&gt;     Aizin GR, 2007, APPL PHYS LETT, V91, DOI 10.1063/1.2800369&lt;br/&gt;     ARNONE DD, 1995, APPL PHYS LETT, V66, P3149, DOI 10.1063/1.113705&lt;br/&gt;     FENG SC, 1993, PHYS REV B, V48, P5354, DOI 10.1103/PhysRevB.48.5354&lt;br/&gt;     Hashiba H, 2004, APPL PHYS LETT, V85, P6036, DOI 10.1063/1.1834716&lt;br/&gt;     HU Q, 1993, APPL PHYS LETT, V62, P837, DOI 10.1063/1.108567&lt;br/&gt;     Hu Q, 1996, SEMICOND SCI TECH, V11, P1888, DOI 10.1088/0268-1242/11/12/021&lt;br/&gt;     JANSSEN TJBM, 1994, J PHYS-CONDENS MAT, V6, pL163, DOI 10.1088/0953-8984/6/13/002&lt;br/&gt;     Kabir NA, 2006, APPL PHYS LETT, V89, DOI 10.1063/1.2357605&lt;br/&gt;     KARADI C, 1994, J OPT SOC AM B, V11, P2566, DOI 10.1364/JOSAB.11.002566&lt;br/&gt;     Knap W, 2002, APPL PHYS LETT, V81, P4637, DOI 10.1063/1.1525851&lt;br/&gt;     Knap W, 2002, APPL PHYS LETT, V80, P3433, DOI 10.1063/1.1473685&lt;br/&gt;     Lee M, 2005, APPL PHYS LETT, V86, DOI 10.1063/1.1851606&lt;br/&gt;     MITTLEMAN D, 2002, SPRINGER SERIES OPTI&lt;br/&gt;     Peralta XG, 2002, APPL PHYS LETT, V81, P1627, DOI 10.1063/1.1497433&lt;br/&gt;     Ryzhii V, 2006, JPN J APPL PHYS 2, V45, pL1118, DOI 10.1143/JJAP.45.L1118&lt;br/&gt;     Shaner EA, 2007, APPL PHYS LETT, V90, DOI 10.1063/1.2735943&lt;br/&gt;     Shaner EA, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2128057&lt;br/&gt;     Teppe F, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2005394&lt;br/&gt;     VANHOUTEN H, 1992, SEMICONDUCT SEMIMET, P9&lt;br/&gt;     WYSS RA, 1993, APPL PHYS LETT, V63, P1522, DOI 10.1063/1.110736&lt;br/&gt;     WYSS RA, 1995, APPL PHYS LETT, V66, P1144, DOI 10.1063/1.113840&lt;br/&gt;Song, J. W. Kabir, N. A. Kawano, Y. Ishibashi, K. Aizin, G. R. Mourokh, L. Reno, J. L. Markelz, A. G. Bird, J. P.&lt;br/&gt;Ishibashi, Koji/G-7065-2012; Bird, Jonathan P/G-4068-2010&lt;br/&gt;Ishibashi, Koji/0000-0001-8131-9969; Bird, Jonathan P/0000-0002-6966-9007; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;27&lt;br/&gt;&lt;br/&gt;6&lt;br/&gt;Amer inst physics&lt;br/&gt;Melville&lt;br/&gt;1077-3118</style></notes><custom7><style face="normal" font="default" size="100%">223115</style></custom7><auth-address><style face="normal" font="default" size="100%">[Song, J. W.|Kabir, N. A.|Bird, J. P.] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA. [Kawano, Y.|Ishibashi, K.] RIKEN, Inst Phys &amp; Chem Res, Adv Device Lab, Wako, Saitama 3510198, Japan. [Aizin, G. R.] CUNY, Kingsborough Coll, Dept Phys Sci, Brooklyn, NY 11235 USA. [Mourokh, L.] CUNY Queens Coll, Dept Phys, Flushing, NY 11367 USA. [Reno, J. L.] Sandia Natl Labs, Nanostruct &amp; Semicond Phys Dept, Albuquerque, NM 87185 USA. [Markelz, A. G.] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA.&lt;br/&gt;Bird, JP (corresponding author), SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA.&lt;br/&gt;jbird@buffalo.edu</style></auth-address></record></records></xml>