<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Brar, B.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Interband impact ionization by terahertz illumination of InAs heterostructures</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.</style></alt-title><short-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.Appl. Phys. Lett.</style></short-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">energy</style></keyword><keyword><style  face="normal" font="default" size="100%">far-infrared excitation</style></keyword><keyword><style  face="normal" font="default" size="100%">inas/alsb quantum-wells</style></keyword><keyword><style  face="normal" font="default" size="100%">inplane</style></keyword><keyword><style  face="normal" font="default" size="100%">modulation</style></keyword><keyword><style  face="normal" font="default" size="100%">Physics</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">1996</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Dec</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">26</style></number><volume><style face="normal" font="default" size="100%">69</style></volume><pages><style face="normal" font="default" size="100%">3975-3977</style></pages><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which omega tau(m) similar to 1, where tau(m) is the momentum relaxation time, and f=omega/2 pi is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz. (C) 1996 American Institute of Physics.&lt;/p&gt;</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:A1996VY89400005</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: VY894&lt;br/&gt;Times Cited: 91&lt;br/&gt;Cited Reference Count: 17&lt;br/&gt;Cited References: &lt;br/&gt;     ASMAR NG, 1995, PHYS REV B, V51, P18041, DOI 10.1103/PhysRevB.51.18041&lt;br/&gt;     Asmar NG, 1996, APPL PHYS LETT, V68, P829, DOI 10.1063/1.116547&lt;br/&gt;     BAIER HU, 1986, SOLID STATE COMMUN, V58, P327, DOI 10.1016/0038-1098(86)90094-3&lt;br/&gt;     BLOEMBER.N, 1974, IEEE J QUANTUM ELECT, VQE10, P375, DOI 10.1109/JQE.1974.1068132&lt;br/&gt;     BOLOGNESI CR, 1994, IEEE ELECTR DEVICE L, V15, P16, DOI 10.1109/55.289476&lt;br/&gt;     CERNE J, 1995, PHYS REV B, V51, P5253, DOI 10.1103/PhysRevB.51.5253&lt;br/&gt;     GANICHEV SD, 1986, ZH EKSP TEOR FIZ+, V90, P445&lt;br/&gt;     GAUER C, 1994, SEMICOND SCI TECH, V9, P1580, DOI 10.1088/0268-1242/9/9/002&lt;br/&gt;     Kochman B, 1996, APPL PHYS LETT, V68, P1936, DOI 10.1063/1.115631&lt;br/&gt;     MARKELZ AG, 1994, SOLID STATE ELECTRON, V37, P1243, DOI 10.1016/0038-1101(94)90399-9&lt;br/&gt;     MARKELZ AG, 1994, SEMICOND SCI TECH, V9, P634, DOI 10.1088/0268-1242/9/5S/063&lt;br/&gt;     NGUYEN C, 1993, J VAC SCI TECHNOL B, V11, P1706, DOI 10.1116/1.586509&lt;br/&gt;     NGUYEN C, 1993, J ELECTRON MATER, V22, P255, DOI 10.1007/BF02665035&lt;br/&gt;     TUTTLE G, 1990, J APPL PHYS, V67, P3032, DOI 10.1063/1.345426&lt;br/&gt;     Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990&lt;br/&gt;     WHITE CRH, 1991, APPL PHYS LETT, V58, P1164, DOI 10.1063/1.104352&lt;br/&gt;     XIE H, 1994, J APPL PHYS, V76, P92, DOI 10.1063/1.357065&lt;br/&gt;Markelz, AG Asmar, NG Brar, B Gwinn, EG&lt;br/&gt;Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;92&lt;br/&gt;&lt;br/&gt;6&lt;br/&gt;Amer inst physics&lt;br/&gt;Melville&lt;br/&gt;1077-3118</style></notes><auth-address><style face="normal" font="default" size="100%">UNIV CALIF SANTA BARBARA, DEPT PHYS, SANTA BARBARA, CA 93106 USA. UNIV CALIF SANTA BARBARA, DEPT ELECT &amp; COMP ENGN, SANTA BARBARA, CA 93106 USA.</style></auth-address></record></records></xml>