<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Nguyen, C.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">SUBCUBIC POWER DEPENDENCE OF 3RD-HARMONIC GENERATION FOR INPLANE, FAR-INFRARED EXCITATION OF INAS QUANTUM-WELLS</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Science and Technology</style></secondary-title><short-title><style face="normal" font="default" size="100%">Semicond. Sci. Technol.</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">634-637</style></pages><isbn><style face="normal" font="default" size="100%">0268-1242</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Large third-order, free-carrier nonlinear susceptibilities, chi(3) (to approximately 0.2 esu), and subcubic dependence of the third-harmonic power on the incident intensity, have been observed between 19 cm-1 and 23 cm-1 for InAs/AlSb quantum wells with electron sheet densities between 2.5 x 10(12) cm-2 and 8 X 10(12) cm-2. We find that the transmission of the fundamental, and the samples&#039; DC conductivity, decrease with increasing incident intensity, indicating a large rise in the scattering rate. Using the intensity-dependent transmission to account for absorption in the sample is not sufficient to recover a cubic power law for the third-harmonic intensity. In addition, given the increased scattering rate indicated by the conductivity data, the bulk free-carrier chi(3) due to non-parabolicity should decrease dramatically with increasing fundamental intensity, contrary to our results. Thus, non-parabolicity alone cannot account for the observed third-harmonic response.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NM75300063</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;S&lt;br/&gt;8th International Conference on Hot Carriers in Semiconductors&lt;br/&gt;Aug 16-20, 1993&lt;br/&gt;Oxford univ, oxford, england&lt;br/&gt;Sci &amp; engn res council; royal soc; brit council; oxford univ&lt;br/&gt;4</style></notes></record></records></xml>