<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Heilweil, E. J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.</style></alt-title><short-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.Appl. Phys. Lett.</style></short-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">domain</style></keyword><keyword><style  face="normal" font="default" size="100%">generation</style></keyword><keyword><style  face="normal" font="default" size="100%">Physics</style></keyword><keyword><style  face="normal" font="default" size="100%">pulses</style></keyword><keyword><style  face="normal" font="default" size="100%">semiconductor surfaces</style></keyword><keyword><style  face="normal" font="default" size="100%">transmission spectroscopy</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">1998</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">18</style></number><volume><style face="normal" font="default" size="100%">72</style></volume><pages><style face="normal" font="default" size="100%">2229-2231</style></pages><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The temperature dependence of the terahertz (THz) output power and spectra from biased photoconductive switches was measured for several antenna gap widths and applied biases. The spectrally integrated THz output had a nonmonotonic temperature dependence in all cases with the value increasing by a factor of 3 from room temperature to 150 K for low biases and 100 K at high biases. An abrupt decrease in output power occurs below 90 K, and the spectrum shifts to lower frequencies as the temperature is lowered. (C) 1998 American Institute of Physics.&lt;/p&gt;</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000073362300011</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: ZK775&lt;br/&gt;Times Cited: 22&lt;br/&gt;Cited Reference Count: 21&lt;br/&gt;Cited References: &lt;br/&gt;     Brener I, 1996, OPT LETT, V21, P1924, DOI 10.1364/OL.21.001924&lt;br/&gt;     BRORSON SD, 1994, APPL PHYS LETT, V64, P2385, DOI 10.1063/1.111622&lt;br/&gt;     CHEVILLE RA, 1995, OPT LETT, V20, P1646, DOI 10.1364/OL.20.001646&lt;br/&gt;     Flanders BN, 1996, J PHYS CHEM-US, V100, P11824, DOI 10.1021/jp960953c&lt;br/&gt;     Haran G, 1997, CHEM PHYS LETT, V274, P365, DOI 10.1016/S0009-2614(97)00705-7&lt;br/&gt;     HU BB, 1990, APPL PHYS LETT, V57, P2629, DOI 10.1063/1.103829&lt;br/&gt;     HU BB, 1995, PHYS REV LETT, V74, P1689, DOI 10.1103/PhysRevLett.74.1689&lt;br/&gt;     Jepsen PU, 1996, J OPT SOC AM B, V13, P2424, DOI 10.1364/JOSAB.13.002424&lt;br/&gt;     KATZENELLENBOGE.N, 1992, ULTRA WIDEBAND SHORT&lt;br/&gt;     Kindt JT, 1996, J PHYS CHEM-US, V100, P10373, DOI 10.1021/jp960141g&lt;br/&gt;     Nahata A, 1996, APPL PHYS LETT, V69, P2321, DOI 10.1063/1.117511&lt;br/&gt;     NUSS MC, 1987, PHYS REV LETT, V58, P2355, DOI 10.1103/PhysRevLett.58.2355&lt;br/&gt;     NUSS MC, 1991, PHYS REV LETT, V66, P3305, DOI 10.1103/PhysRevLett.66.3305&lt;br/&gt;     PARKS B, 1995, PHYS REV LETT, V74, P3265, DOI 10.1103/PhysRevLett.74.3265&lt;br/&gt;     RALPH SE, 1992, PHOTO INDUCED SPACE, V261&lt;br/&gt;     RODRIGUEZ G, 1994, OPT LETT, V19, P1194&lt;br/&gt;     SAETA PN, 1992, APPL PHYS LETT, V60, P1477, DOI 10.1063/1.107276&lt;br/&gt;     WANG HH, 1993, J ELECTRON MATER, V22, P1461, DOI 10.1007/BF02649999&lt;br/&gt;     Wang S, 1989, FUNDAMENTALS SEMICON&lt;br/&gt;     ZHANG XC, 1990, APPL PHYS LETT, V56, P1011, DOI 10.1063/1.102601&lt;br/&gt;     ZHANG XC, 1994, APPL PHYS LETT, V64, P622, DOI 10.1063/1.111069&lt;br/&gt;Markelz, AG Heilweil, EJ&lt;br/&gt;Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;22&lt;br/&gt;&lt;br/&gt;6&lt;br/&gt;Amer inst physics&lt;br/&gt;Woodbury</style></notes><auth-address><style face="normal" font="default" size="100%">NIST, Opt Technol Div, Gaithersburg, MD 20899 USA.&lt;br/&gt;Markelz, AG (corresponding author), NIST, Opt Technol Div, Gaithersburg, MD 20899 USA.</style></auth-address></record></records></xml>