<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kabir, N. A.</style></author><author><style face="normal" font="default" size="100%">Yoon, Y.</style></author><author><style face="normal" font="default" size="100%">Knab, J. R.</style></author><author><style face="normal" font="default" size="100%">Chen, J. Y.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Reno, J. L.</style></author><author><style face="normal" font="default" size="100%">Sadofyev, Y.</style></author><author><style face="normal" font="default" size="100%">Johnson, S.</style></author><author><style face="normal" font="default" size="100%">Zhang, Y. H.</style></author><author><style face="normal" font="default" size="100%">Bird, J. P.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.</style></alt-title><short-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.Appl. Phys. Lett.</style></short-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">field-effect transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">photoconductivity</style></keyword><keyword><style  face="normal" font="default" size="100%">Physics</style></keyword><keyword><style  face="normal" font="default" size="100%">plasma-waves</style></keyword><keyword><style  face="normal" font="default" size="100%">radiation</style></keyword><keyword><style  face="normal" font="default" size="100%">resonant detection</style></keyword><keyword><style  face="normal" font="default" size="100%">subterahertz</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2006</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Sep</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">13</style></number><volume><style face="normal" font="default" size="100%">89</style></volume><pages><style face="normal" font="default" size="100%">3</style></pages><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Frequency-dependent complex conductivity of high-mobility GaAs and InAs two-dimensional-electron-gas (2DEG) systems is studied by terahertz time domain spectroscopy. Determining the momentum relaxation time from a Drude model, the authors find a lower value than that from dc measurements, particularly at high frequencies/low temperatures. These deviations are consistent with the ratio tau(t)/tau(q,) where tau(q) is the full scattering time. This suggests that small-angle scattering leads to weaker heating of 2DEGs at low temperatures than expected from dc mobilit9y. (c) 2006 American Institute of Physics.&lt;/p&gt;</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000240875800066</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: 089JE&lt;br/&gt;Times Cited: 18&lt;br/&gt;Cited Reference Count: 16&lt;br/&gt;Cited References: &lt;br/&gt;     ANDO T, 1982, REV MOD PHYS, V54, P437, DOI 10.1103/RevModPhys.54.437&lt;br/&gt;     ANDO T, 1989, HIGH MAGNETIC FIELDS, V2, P164&lt;br/&gt;     Ashcroft NW, 1976, SOLID STATE PHYS, P1&lt;br/&gt;     Beard MC, 2000, PHYS REV B, V62, P15764, DOI 10.1103/PhysRevB.62.15764&lt;br/&gt;     Cerne J, 2000, PHYS REV B, V61, P8133, DOI 10.1103/PhysRevB.61.8133&lt;br/&gt;     COLERIDGE PT, 1991, PHYS REV B, V44, P3793, DOI 10.1103/PhysRevB.44.3793&lt;br/&gt;     Dorozhkin PS, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2035883&lt;br/&gt;     Knap W, 2002, APPL PHYS LETT, V81, P4637, DOI 10.1063/1.1525851&lt;br/&gt;     Knap W, 2002, APPL PHYS LETT, V80, P3433, DOI 10.1063/1.1473685&lt;br/&gt;     Kukushkin IV, 2005, APPL PHYS LETT, V86, DOI 10.1063/1.1856143&lt;br/&gt;     MADELUNG O, 1996, SEMICONDUCTORS BASIC, P109&lt;br/&gt;     MCKNIGHT SW, 1987, INFRARED PHYS, V27, P327, DOI 10.1016/0020-0891(87)90074-1&lt;br/&gt;     Peralta XG, 2002, APPL PHYS LETT, V81, P1627, DOI 10.1063/1.1497433&lt;br/&gt;     Sadofyev YG, 2002, APPL PHYS LETT, V81, P1833, DOI 10.1063/1.1504882&lt;br/&gt;     Shaner EA, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2128057&lt;br/&gt;     ZAWADZKI W, 1974, ADV PHYS, V23, P435, DOI 10.1080/00018737400101371&lt;br/&gt;Kabir, N. A. Yoon, Y. Knab, J. R. Chen, J. -Y. Markelz, A. G. Reno, J. L. Sadofyev, Y. Johnson, S. Zhang, Y. -H. Bird, J. P.&lt;br/&gt;Bird, Jonathan P/G-4068-2010&lt;br/&gt;Bird, Jonathan P/0000-0002-6966-9007; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;18&lt;br/&gt;&lt;br/&gt;15&lt;br/&gt;Amer inst physics&lt;br/&gt;Melville</style></notes><custom7><style face="normal" font="default" size="100%">132109</style></custom7><auth-address><style face="normal" font="default" size="100%">SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA. SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA. Sandia Natl Labs, Nanostruct &amp; Semicond Phys Dept, Albuquerque, NM 87185 USA. Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA. Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA.&lt;br/&gt;Markelz, AG (corresponding author), SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA.&lt;br/&gt;jbird@buffalo.edu</style></auth-address></record></records></xml>