<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Cerne, J.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Temperature of quasi-two-dimensional electron gases under steady-state terahertz drive</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.</style></alt-title><short-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.Appl. Phys. Lett.</style></short-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">hot-electrons</style></keyword><keyword><style  face="normal" font="default" size="100%">Physics</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">1996</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Feb</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">6</style></number><volume><style face="normal" font="default" size="100%">68</style></volume><pages><style face="normal" font="default" size="100%">829-831</style></pages><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We use photoluminescence to study the time-average energy distribution of electrons in the presence of strong steady-state drive at terahertz (THz) frequencies, in a modulation-doped 125 Angstrom AlGaAs/GaAs square well that is held at low lattice temperature TL. We find that the energy distribution can be characterized by an effective electron temperature, T-e(&amp;gt;T-L), that agrees well with values estimated from the THz-illuminated, dc conductivity. This agreement indicates that under strong THz drive, LO phonon scattering dominates both energy and momentum relaxation; that the carrier distribution maintains a heated, thermal form; and that phonon drift effects are negligible. (C) 1996 American Institute of Physics.&lt;/p&gt;</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:A1996TT66300035</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: TT663&lt;br/&gt;Times Cited: 59&lt;br/&gt;Cited Reference Count: 12&lt;br/&gt;Cited References: &lt;br/&gt;     ASMAR NG, 1995, PHYS REV B, V51, P18041, DOI 10.1103/PhysRevB.51.18041&lt;br/&gt;     BETHUNE DS, 1989, J OPT SOC AM B, V6, P910, DOI 10.1364/JOSAB.6.000910&lt;br/&gt;     CERNE J, 1995, PHYS REV B, V51, P5253, DOI 10.1103/PhysRevB.51.5253&lt;br/&gt;     CONWELL E, 1967, SOLID STATE PHYS S, V9&lt;br/&gt;     GUPTA R, 1992, PHYS REV B, V46, P7745, DOI 10.1103/PhysRevB.46.7745&lt;br/&gt;     HEYMAN JN, 1994, PHYS REV LETT, V72, P2183, DOI 10.1103/PhysRevLett.72.2183&lt;br/&gt;     KOMIYAMA S, 1985, PHYS REV B, V32, P5532, DOI 10.1103/PhysRevB.32.5532&lt;br/&gt;     MARKELZ AG, 1994, SOLID STATE ELECTRON, V37, P1243, DOI 10.1016/0038-1101(94)90399-9&lt;br/&gt;     MARKELZ AG, 1995, THESIS U CALIFORNIA&lt;br/&gt;     SHAH J, 1984, APPL PHYS LETT, V44, P322, DOI 10.1063/1.94739&lt;br/&gt;     SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2&lt;br/&gt;     YANG CH, 1985, PHYS REV LETT, V55, P2359, DOI 10.1103/PhysRevLett.55.2359&lt;br/&gt;Asmar, NG Cerne, J Markelz, AG Gwinn, EG Sherwin, MS Campman, KL Gossard, AC&lt;br/&gt;Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;59&lt;br/&gt;&lt;br/&gt;7&lt;br/&gt;Amer inst physics&lt;br/&gt;Woodbury</style></notes><auth-address><style face="normal" font="default" size="100%">UNIV CALIF SANTA BARBARA,CTR FREE ELECTRON LASER STUDIES,SANTA BARBARA,CA 93106. UNIV CALIF SANTA BARBARA,DEPT ELECT &amp; COMP ENGN,SANTA BARBARA,CA 93106.&lt;br/&gt;Asmar, NG (corresponding author), UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106, USA.</style></auth-address></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Galdrikian, B.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Williams, J. B.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Undressing a collective intersubband excitation in a quantum well</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Mar 25</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">13</style></number><volume><style face="normal" font="default" size="100%">76</style></volume><pages><style face="normal" font="default" size="100%">2382-2385</style></pages><isbn><style face="normal" font="default" size="100%">0031-9007</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We have experimentally measured the 1-2 intersubband absorption in a single 40 nm wide modulation-doped Al0.3Ga0.7As/GaAs square quantum well as a function of frequency, intensity, and charge density. The low-intensity depolarization-shifted absorption occurs near 80 cm(-1) (10 meV or 2.4 THz), nearly 30% higher than the intersubband spacing. At higher intensities, the absorption peak shifts to lower frequencies. Our data are in good agreement with a theory proposed by Zaluzny, which attributes the redshift to a reduction in the depolarization shift as the excited subband becomes populated.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1996UB14800044</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;78</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Galdrikian, B.</style></author><author><style face="normal" font="default" size="100%">Heyman, J.</style></author><author><style face="normal" font="default" size="100%">Markelz, A.</style></author><author><style face="normal" font="default" size="100%">Campman, K.</style></author><author><style face="normal" font="default" size="100%">Fafard, S.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">NONLINEAR QUANTUM DYNAMICS IN SEMICONDUCTOR QUANTUM-WELLS</style></title><secondary-title><style face="normal" font="default" size="100%">Physica D-Nonlinear Phenomena</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May 15</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1-3</style></number><volume><style face="normal" font="default" size="100%">83</style></volume><pages><style face="normal" font="default" size="100%">229-242</style></pages><isbn><style face="normal" font="default" size="100%">0167-2789</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We discuss recent measurements of the nonlinear response of electrons in wide quantum wells driven by intense electromagnetic radiation at terahertz frequencies. The theme is the interplay of quantum mechanics, strong periodic driving, the electron-electron interaction and dissipation. We discuss harmonic generation from an asymmetric double quantum well in which the effects of dynamic screening are important. Measurements and theory are found to be in good agreement. We also discuss intensity-dependent absorption in a 400 Angstrom square quantum well. A new nonlinear quantum effect occurs, in which the frequency at which electromagnetic radiation is absorbed shifts to the red with increasing intensity. The preliminary experimental results are in agreement with a theory by Zaluzny, in which the source of the nonlinearity is the self-consistent potential in the Hartree approximation for the electron dynamics.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1995RA41200018</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;14th Annual International Conference of the Center-for-Nonlinear-Studies - Quantum Complexity in Mesoscopic Systems&lt;br/&gt;May 16-20, 1994&lt;br/&gt;Los alamos, nm&lt;br/&gt;Ctr nonlinear studies&lt;br/&gt;34</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Cerne, J.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Allen, S. J.</style></author><author><style face="normal" font="default" size="100%">Sundaram, M.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Vanson, P. C.</style></author><author><style face="normal" font="default" size="100%">Bimberg, D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">QUENCHING OF EXCITONIC QUANTUM-WELL PHOTOLUMINESCENCE BY INTENSE FAR-INFRARED RADIATION - FREE-CARRIER HEATING</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Feb 15</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">8</style></number><volume><style face="normal" font="default" size="100%">51</style></volume><pages><style face="normal" font="default" size="100%">5253-5262</style></pages><isbn><style face="normal" font="default" size="100%">0163-1829</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><accession-num><style face="normal" font="default" size="100%">WOS:A1995QP75800064</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;29</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Cerne, J.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">RESONANT-ENERGY RELAXATION OF TERAHERTZ-DRIVEN 2-DIMENSIONAL ELECTRON GASES</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Jun 15</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">24</style></number><volume><style face="normal" font="default" size="100%">51</style></volume><pages><style face="normal" font="default" size="100%">18041-18044</style></pages><isbn><style face="normal" font="default" size="100%">0163-1829</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><accession-num><style face="normal" font="default" size="100%">WOS:A1995RF85700093</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;119</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Nguyen, C.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Far-infrared harmonic generation from semiconductor heterostructures</style></title><secondary-title><style face="normal" font="default" size="100%">SPIE Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year></dates><volume><style face="normal" font="default" size="100%">1854</style></volume><pages><style face="normal" font="default" size="100%">48-55</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">FAR-INFRARED SATURATION SPECTROSCOPY OF A SINGLE SQUARE-WELL</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Science and Technology</style></secondary-title><short-title><style face="normal" font="default" size="100%">Semicond. Sci. Technol.</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">627-629</style></pages><isbn><style face="normal" font="default" size="100%">0268-1242</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We have performed saturation spectroscopy measurements of the lowest intersubband transition in a single 400 angstrom GaAs/Al0.3Ga0.7As modulation-doped square quantum well. We couple intense tunable far-infrared radiation from the Santa Barbara free electron laser into our sample using an edge-coupling technique and measure absorption as a function of frequency and intensity. Saturation and frequency shifts in the absorption line are clearly observed. We attribute the frequency shifts to reductions in the many-body depolarization shift. From our preliminary measurements, we estimate the intersubband relaxation time to be 600 ps to within a factor of three.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NM75300061</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;S&lt;br/&gt;8th International Conference on Hot Carriers in Semiconductors&lt;br/&gt;Aug 16-20, 1993&lt;br/&gt;Oxford univ, oxford, england&lt;br/&gt;Sci &amp; engn res council; royal soc; brit council; oxford univ&lt;br/&gt;31</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Nguyen, C.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">GIANT 3RD-ORDER NONLINEAR SUSCEPTIBILITIES FOR INPLANE FAR-INFRARED EXCITATION OF SINGLE INAS QUANTUM-WELLS</style></title><secondary-title><style face="normal" font="default" size="100%">Solid-State Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Apr-Jun</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">4-6</style></number><volume><style face="normal" font="default" size="100%">37</style></volume><pages><style face="normal" font="default" size="100%">1243-1245</style></pages><isbn><style face="normal" font="default" size="100%">0038-1101</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Third-order, free-carrier nonlinear susceptibilities, chi(3), have been measured between 19 and 23 cm-1 for three InAs/AlSb quantum wells with sheet densities between 2.5 x 10(12) cm-2 and 8 x 10(12) cm-2. We find that these wells are strongly nonlinear at far-infrared frequencies: odd harmonics ninth order have been observed at high incident intensities, and the peak value of chi(3) reaches approximately 1 esu. This is several orders of magnitude larger than previously reported values for chi(3) in bulk n-GaAs (10(-4) esu)[1] and in polyacetylene (10(-7) esu)[2]. The large magnitude of chi(3) is attributed to the high carrier density in the InAs wells, and to the strong non-parabolicity of the conduction band in InAs. However, the free-carrier chi(3) for bulk InAs predicts a density-dependence different from that observed, and the measured decrease in chi(3) with increasing intensity indicates non-perturbative response. We find that the anisotropy of chi(3) displays the expected 4-fold symmetry.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NE79600163</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;6th International Conference on Modulated Semiconductor Structures&lt;br/&gt;Aug 23-27, 1993&lt;br/&gt;Garmisch partenkir, germany&lt;br/&gt;Tech univ munchen, walter schottky inst&lt;br/&gt;9</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Allen, S. J.</style></author><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Guimaraes, P.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Kaminski, J. P.</style></author><author><style face="normal" font="default" size="100%">Keay, B. J.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Ramian, G.</style></author><author><style face="normal" font="default" size="100%">Scott, J. S.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Chow, D.</style></author><author><style face="normal" font="default" size="100%">Lui, M.</style></author><author><style face="normal" font="default" size="100%">Liu, T. Y.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">PROBING TERAHERTZ DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH UCSB FREE-ELECTRON LASERS</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Luminescence</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Apr</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">60-1</style></volume><pages><style face="normal" font="default" size="100%">250-255</style></pages><isbn><style face="normal" font="default" size="100%">0022-2313</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The UCSB free-electron lasers provide kilowatts of continuously tunable radiation from 120 GHz to 4.8 THz. They have the most impact on terahertz science and technology that require a tunable, high power source to explore non-linear dynamics or that sacrifice incident power to recover the linear response of systems with very small cross-section. We describe three experiments that demonstrate the utility of these lasers in experiments on the terahertz dynamics of semiconductor nanostructures: (i) terahertz dynamics of resonant tunneling diodes, (ii) saturation spectroscopy of quantum wells and (iii) photon-assisted tunneling in superlattices.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NR36100065</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017; Guimaraes, Paulo Sergio Soares/B-6918-2012&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Guimaraes, Paulo Sergio Soares/0000-0002-0113-2641; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;1993 International Conference on Luminescence (ICL 93)&lt;br/&gt;Aug 09-13, 1993&lt;br/&gt;Univ connecticut, storrs, ct&lt;br/&gt;Univ connecticut; opt soc amer; amer phys soc; ieee, laser &amp; electro opt soc; int union pure &amp; appl phys; int sci fdn; univ connecticut res fdn&lt;br/&gt;3</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Nguyen, C.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">SUBCUBIC POWER DEPENDENCE OF 3RD-HARMONIC GENERATION FOR INPLANE, FAR-INFRARED EXCITATION OF INAS QUANTUM-WELLS</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Science and Technology</style></secondary-title><short-title><style face="normal" font="default" size="100%">Semicond. Sci. Technol.</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">634-637</style></pages><isbn><style face="normal" font="default" size="100%">0268-1242</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Large third-order, free-carrier nonlinear susceptibilities, chi(3) (to approximately 0.2 esu), and subcubic dependence of the third-harmonic power on the incident intensity, have been observed between 19 cm-1 and 23 cm-1 for InAs/AlSb quantum wells with electron sheet densities between 2.5 x 10(12) cm-2 and 8 X 10(12) cm-2. We find that the transmission of the fundamental, and the samples&#039; DC conductivity, decrease with increasing incident intensity, indicating a large rise in the scattering rate. Using the intensity-dependent transmission to account for absorption in the sample is not sufficient to recover a cubic power law for the third-harmonic intensity. In addition, given the increased scattering rate indicated by the conductivity data, the bulk free-carrier chi(3) due to non-parabolicity should decrease dramatically with increasing fundamental intensity, contrary to our results. Thus, non-parabolicity alone cannot account for the observed third-harmonic response.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NM75300063</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;S&lt;br/&gt;8th International Conference on Hot Carriers in Semiconductors&lt;br/&gt;Aug 16-20, 1993&lt;br/&gt;Oxford univ, oxford, england&lt;br/&gt;Sci &amp; engn res council; royal soc; brit council; oxford univ&lt;br/&gt;4</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Bewley, W. W.</style></author><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Galdrikian, B.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Sundaram, M.</style></author><author><style face="normal" font="default" size="100%">Birnir, B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Far-infrared nonlinear response of electrons in semiconductor nanostructures</style></title><secondary-title><style face="normal" font="default" size="100%">SPIE Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><volume><style face="normal" font="default" size="100%">1854</style></volume><pages><style face="normal" font="default" size="100%">36-47</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>