<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Galdrikian, B.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Williams, J. B.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Undressing a collective intersubband excitation in a quantum well</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Mar 25</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">13</style></number><volume><style face="normal" font="default" size="100%">76</style></volume><pages><style face="normal" font="default" size="100%">2382-2385</style></pages><isbn><style face="normal" font="default" size="100%">0031-9007</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We have experimentally measured the 1-2 intersubband absorption in a single 40 nm wide modulation-doped Al0.3Ga0.7As/GaAs square quantum well as a function of frequency, intensity, and charge density. The low-intensity depolarization-shifted absorption occurs near 80 cm(-1) (10 meV or 2.4 THz), nearly 30% higher than the intersubband spacing. At higher intensities, the absorption peak shifts to lower frequencies. Our data are in good agreement with a theory proposed by Zaluzny, which attributes the redshift to a reduction in the depolarization shift as the excited subband becomes populated.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1996UB14800044</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;78</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Galdrikian, B.</style></author><author><style face="normal" font="default" size="100%">Heyman, J.</style></author><author><style face="normal" font="default" size="100%">Markelz, A.</style></author><author><style face="normal" font="default" size="100%">Campman, K.</style></author><author><style face="normal" font="default" size="100%">Fafard, S.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">NONLINEAR QUANTUM DYNAMICS IN SEMICONDUCTOR QUANTUM-WELLS</style></title><secondary-title><style face="normal" font="default" size="100%">Physica D-Nonlinear Phenomena</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May 15</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1-3</style></number><volume><style face="normal" font="default" size="100%">83</style></volume><pages><style face="normal" font="default" size="100%">229-242</style></pages><isbn><style face="normal" font="default" size="100%">0167-2789</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We discuss recent measurements of the nonlinear response of electrons in wide quantum wells driven by intense electromagnetic radiation at terahertz frequencies. The theme is the interplay of quantum mechanics, strong periodic driving, the electron-electron interaction and dissipation. We discuss harmonic generation from an asymmetric double quantum well in which the effects of dynamic screening are important. Measurements and theory are found to be in good agreement. We also discuss intensity-dependent absorption in a 400 Angstrom square quantum well. A new nonlinear quantum effect occurs, in which the frequency at which electromagnetic radiation is absorbed shifts to the red with increasing intensity. The preliminary experimental results are in agreement with a theory by Zaluzny, in which the source of the nonlinearity is the self-consistent potential in the Hartree approximation for the electron dynamics.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1995RA41200018</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;14th Annual International Conference of the Center-for-Nonlinear-Studies - Quantum Complexity in Mesoscopic Systems&lt;br/&gt;May 16-20, 1994&lt;br/&gt;Los alamos, nm&lt;br/&gt;Ctr nonlinear studies&lt;br/&gt;34</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Cerne, J.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">RESONANT-ENERGY RELAXATION OF TERAHERTZ-DRIVEN 2-DIMENSIONAL ELECTRON GASES</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Jun 15</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">24</style></number><volume><style face="normal" font="default" size="100%">51</style></volume><pages><style face="normal" font="default" size="100%">18041-18044</style></pages><isbn><style face="normal" font="default" size="100%">0163-1829</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><accession-num><style face="normal" font="default" size="100%">WOS:A1995RF85700093</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;119</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">DC TRANSPORT IN INTENSE, INPLANE TERAHERTZ ELECTRIC-FIELDS IN AL(X)GA(1-X)AS HETEROSTRUCTURES AT 300-K</style></title><secondary-title><style face="normal" font="default" size="100%">Solid-State Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Apr-Jun</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">4-6</style></number><volume><style face="normal" font="default" size="100%">37</style></volume><pages><style face="normal" font="default" size="100%">693-695</style></pages><isbn><style face="normal" font="default" size="100%">0038-1101</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We report 300 K studies of the dependence of the in-plane, d.c. conductivity, sigma(d.c.) (E(omega)), of a quasi 2D electron gas on the amplitude E(omega) and frequency of intense, far-infrared fields (omega/2pi = 0.24-3.5 THz). We measure sigma(d.c.) (E(omega) parallel-to E(d.c.)), where E(d.c.) is a small sensing field, and observe a monotonic decrease in sigma(d.c.) with increasing E(omega). Although a simple scaling ansatz collapses the measured sigma(d.c.) (E(omega)) data onto a single curve for frequencies from 0.25-3.45 THz (at low to moderate scaled fields), the decrease in conductivity is substantially more rapid than expected from comparison to similar data taken by Masselink et al. [Solid-St. Electron. 31, 337 (1988)] at 35 GHz. We tentatively attribute this difference to effects of a high-frequency modulation in the electron temperature.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NE79600042</style></accession-num><notes><style face="normal" font="default" size="100%">Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;6th International Conference on Modulated Semiconductor Structures&lt;br/&gt;Aug 23-27, 1993&lt;br/&gt;Garmisch partenkir, germany&lt;br/&gt;Tech univ munchen, walter schottky inst&lt;br/&gt;1</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">ENERGY RELAXATION AT THZ FREQUENCIES IN ALXGA1-XAS HETEROSTRUCTURES</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Science and Technology</style></secondary-title><short-title><style face="normal" font="default" size="100%">Semicond. Sci. Technol.</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">828-830</style></pages><isbn><style face="normal" font="default" size="100%">0268-1242</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We report 4.2 K studies of the dependence of the in-plane, DC conductivity of a quasi 2D electron gas on the amplitude E(omega) of applied fields with frequencies from 0.25 THz to 3.5 THz. We analyse the dependence of sigma(DC) on E(omega) assuming that electron-optical phonon scattering dominates energy relaxation, that the absorbed power has a Drude form and that the electron distribution is thermal. This simple analysis is self-consistent: Arrhenius plots of the estimated energy loss rate have a slope near -homega(LO)BAR/k(B) for all frequencies, as expected for energy loss by optical phonon emission. We find that the effective energy relaxation time tau(epsilon) varies with the frequency of the applied field, from tau(epsilon) approximately 4 ps at 0.34 THz to tau(epsilon) approximately 0.3 ps at 3.45 THz. This may indicate a frequency-dependent form for the hot-phonon distribution.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NM75300116</style></accession-num><notes><style face="normal" font="default" size="100%">Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;S&lt;br/&gt;8th International Conference on Hot Carriers in Semiconductors&lt;br/&gt;Aug 16-20, 1993&lt;br/&gt;Oxford univ, oxford, england&lt;br/&gt;Sci &amp; engn res council; royal soc; brit council; oxford univ&lt;br/&gt;2</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">FAR-INFRARED SATURATION SPECTROSCOPY OF A SINGLE SQUARE-WELL</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Science and Technology</style></secondary-title><short-title><style face="normal" font="default" size="100%">Semicond. Sci. Technol.</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">627-629</style></pages><isbn><style face="normal" font="default" size="100%">0268-1242</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We have performed saturation spectroscopy measurements of the lowest intersubband transition in a single 400 angstrom GaAs/Al0.3Ga0.7As modulation-doped square quantum well. We couple intense tunable far-infrared radiation from the Santa Barbara free electron laser into our sample using an edge-coupling technique and measure absorption as a function of frequency and intensity. Saturation and frequency shifts in the absorption line are clearly observed. We attribute the frequency shifts to reductions in the many-body depolarization shift. From our preliminary measurements, we estimate the intersubband relaxation time to be 600 ps to within a factor of three.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NM75300061</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;S&lt;br/&gt;8th International Conference on Hot Carriers in Semiconductors&lt;br/&gt;Aug 16-20, 1993&lt;br/&gt;Oxford univ, oxford, england&lt;br/&gt;Sci &amp; engn res council; royal soc; brit council; oxford univ&lt;br/&gt;31</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Allen, S. J.</style></author><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Guimaraes, P.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Kaminski, J. P.</style></author><author><style face="normal" font="default" size="100%">Keay, B. J.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Ramian, G.</style></author><author><style face="normal" font="default" size="100%">Scott, J. S.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Chow, D.</style></author><author><style face="normal" font="default" size="100%">Lui, M.</style></author><author><style face="normal" font="default" size="100%">Liu, T. Y.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">PROBING TERAHERTZ DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH UCSB FREE-ELECTRON LASERS</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Luminescence</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Apr</style></date></pub-dates></dates><volume><style face="normal" font="default" size="100%">60-1</style></volume><pages><style face="normal" font="default" size="100%">250-255</style></pages><isbn><style face="normal" font="default" size="100%">0022-2313</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The UCSB free-electron lasers provide kilowatts of continuously tunable radiation from 120 GHz to 4.8 THz. They have the most impact on terahertz science and technology that require a tunable, high power source to explore non-linear dynamics or that sacrifice incident power to recover the linear response of systems with very small cross-section. We describe three experiments that demonstrate the utility of these lasers in experiments on the terahertz dynamics of semiconductor nanostructures: (i) terahertz dynamics of resonant tunneling diodes, (ii) saturation spectroscopy of quantum wells and (iii) photon-assisted tunneling in superlattices.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NR36100065</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017; Guimaraes, Paulo Sergio Soares/B-6918-2012&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Guimaraes, Paulo Sergio Soares/0000-0002-0113-2641; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;1993 International Conference on Luminescence (ICL 93)&lt;br/&gt;Aug 09-13, 1993&lt;br/&gt;Univ connecticut, storrs, ct&lt;br/&gt;Univ connecticut; opt soc amer; amer phys soc; ieee, laser &amp; electro opt soc; int union pure &amp; appl phys; int sci fdn; univ connecticut res fdn&lt;br/&gt;3</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Bewley, W. W.</style></author><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Galdrikian, B.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Sundaram, M.</style></author><author><style face="normal" font="default" size="100%">Birnir, B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Far-infrared nonlinear response of electrons in semiconductor nanostructures</style></title><secondary-title><style face="normal" font="default" size="100%">SPIE Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><volume><style face="normal" font="default" size="100%">1854</style></volume><pages><style face="normal" font="default" size="100%">36-47</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>