<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Relaxation times in InAs/AlSb quantum wells </style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1998</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://aip.scitation.org/doi/abs/10.1063/1.121377</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">72</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><section><style face="normal" font="default" size="100%">2439</style></section></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Brar, B.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Interband impact ionization by terahertz illumination of InAs heterostructures</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.</style></alt-title><short-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.Appl. Phys. Lett.</style></short-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">energy</style></keyword><keyword><style  face="normal" font="default" size="100%">far-infrared excitation</style></keyword><keyword><style  face="normal" font="default" size="100%">inas/alsb quantum-wells</style></keyword><keyword><style  face="normal" font="default" size="100%">inplane</style></keyword><keyword><style  face="normal" font="default" size="100%">modulation</style></keyword><keyword><style  face="normal" font="default" size="100%">Physics</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">1996</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Dec</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">26</style></number><volume><style face="normal" font="default" size="100%">69</style></volume><pages><style face="normal" font="default" size="100%">3975-3977</style></pages><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which omega tau(m) similar to 1, where tau(m) is the momentum relaxation time, and f=omega/2 pi is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz. (C) 1996 American Institute of Physics.&lt;/p&gt;</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:A1996VY89400005</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: VY894&lt;br/&gt;Times Cited: 91&lt;br/&gt;Cited Reference Count: 17&lt;br/&gt;Cited References: &lt;br/&gt;     ASMAR NG, 1995, PHYS REV B, V51, P18041, DOI 10.1103/PhysRevB.51.18041&lt;br/&gt;     Asmar NG, 1996, APPL PHYS LETT, V68, P829, DOI 10.1063/1.116547&lt;br/&gt;     BAIER HU, 1986, SOLID STATE COMMUN, V58, P327, DOI 10.1016/0038-1098(86)90094-3&lt;br/&gt;     BLOEMBER.N, 1974, IEEE J QUANTUM ELECT, VQE10, P375, DOI 10.1109/JQE.1974.1068132&lt;br/&gt;     BOLOGNESI CR, 1994, IEEE ELECTR DEVICE L, V15, P16, DOI 10.1109/55.289476&lt;br/&gt;     CERNE J, 1995, PHYS REV B, V51, P5253, DOI 10.1103/PhysRevB.51.5253&lt;br/&gt;     GANICHEV SD, 1986, ZH EKSP TEOR FIZ+, V90, P445&lt;br/&gt;     GAUER C, 1994, SEMICOND SCI TECH, V9, P1580, DOI 10.1088/0268-1242/9/9/002&lt;br/&gt;     Kochman B, 1996, APPL PHYS LETT, V68, P1936, DOI 10.1063/1.115631&lt;br/&gt;     MARKELZ AG, 1994, SOLID STATE ELECTRON, V37, P1243, DOI 10.1016/0038-1101(94)90399-9&lt;br/&gt;     MARKELZ AG, 1994, SEMICOND SCI TECH, V9, P634, DOI 10.1088/0268-1242/9/5S/063&lt;br/&gt;     NGUYEN C, 1993, J VAC SCI TECHNOL B, V11, P1706, DOI 10.1116/1.586509&lt;br/&gt;     NGUYEN C, 1993, J ELECTRON MATER, V22, P255, DOI 10.1007/BF02665035&lt;br/&gt;     TUTTLE G, 1990, J APPL PHYS, V67, P3032, DOI 10.1063/1.345426&lt;br/&gt;     Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990&lt;br/&gt;     WHITE CRH, 1991, APPL PHYS LETT, V58, P1164, DOI 10.1063/1.104352&lt;br/&gt;     XIE H, 1994, J APPL PHYS, V76, P92, DOI 10.1063/1.357065&lt;br/&gt;Markelz, AG Asmar, NG Brar, B Gwinn, EG&lt;br/&gt;Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;92&lt;br/&gt;&lt;br/&gt;6&lt;br/&gt;Amer inst physics&lt;br/&gt;Melville&lt;br/&gt;1077-3118</style></notes><auth-address><style face="normal" font="default" size="100%">UNIV CALIF SANTA BARBARA, DEPT PHYS, SANTA BARBARA, CA 93106 USA. UNIV CALIF SANTA BARBARA, DEPT ELECT &amp; COMP ENGN, SANTA BARBARA, CA 93106 USA.</style></auth-address></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Nonlinear response of quantum-confined electrons in nonparabolic subbands</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Applied Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Aug 15</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">4</style></number><volume><style face="normal" font="default" size="100%">80</style></volume><pages><style face="normal" font="default" size="100%">2533-2535</style></pages><isbn><style face="normal" font="default" size="100%">0021-8979</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We show that quantum confinement can dramatically alter the density-dependence of the third-order susceptibility, chi(NP)((3)) that arises from band nonparabolicity. Our results predict an oscillatory dependence of the efficiencies for third-harmonic generation and four-wave mixing on the subband occupation of quantum wells, and for narrow wells with high charge densities predict an enhancement over the bulk susceptibility. We also make a simple estimate of the fields required to saturate this nonparabolicity contribution to chi((3)). We discuss these results in light of recent experiments on third-harmonic generation from narrow-gap quantum wells at frequencies of similar to 1 THz, and show that nonparabolicity may not be the only nonlinearity contributing to the large chi((3)) observed. (C) 1996 American Institute of Physics.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1996VD53200087</style></accession-num><notes><style face="normal" font="default" size="100%">7</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Cerne, J.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Temperature of quasi-two-dimensional electron gases under steady-state terahertz drive</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.</style></alt-title><short-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.Appl. Phys. Lett.</style></short-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">hot-electrons</style></keyword><keyword><style  face="normal" font="default" size="100%">Physics</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">1996</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Feb</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">6</style></number><volume><style face="normal" font="default" size="100%">68</style></volume><pages><style face="normal" font="default" size="100%">829-831</style></pages><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We use photoluminescence to study the time-average energy distribution of electrons in the presence of strong steady-state drive at terahertz (THz) frequencies, in a modulation-doped 125 Angstrom AlGaAs/GaAs square well that is held at low lattice temperature TL. We find that the energy distribution can be characterized by an effective electron temperature, T-e(&amp;gt;T-L), that agrees well with values estimated from the THz-illuminated, dc conductivity. This agreement indicates that under strong THz drive, LO phonon scattering dominates both energy and momentum relaxation; that the carrier distribution maintains a heated, thermal form; and that phonon drift effects are negligible. (C) 1996 American Institute of Physics.&lt;/p&gt;</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:A1996TT66300035</style></accession-num><notes><style face="normal" font="default" size="100%">ISI Document Delivery No.: TT663&lt;br/&gt;Times Cited: 59&lt;br/&gt;Cited Reference Count: 12&lt;br/&gt;Cited References: &lt;br/&gt;     ASMAR NG, 1995, PHYS REV B, V51, P18041, DOI 10.1103/PhysRevB.51.18041&lt;br/&gt;     BETHUNE DS, 1989, J OPT SOC AM B, V6, P910, DOI 10.1364/JOSAB.6.000910&lt;br/&gt;     CERNE J, 1995, PHYS REV B, V51, P5253, DOI 10.1103/PhysRevB.51.5253&lt;br/&gt;     CONWELL E, 1967, SOLID STATE PHYS S, V9&lt;br/&gt;     GUPTA R, 1992, PHYS REV B, V46, P7745, DOI 10.1103/PhysRevB.46.7745&lt;br/&gt;     HEYMAN JN, 1994, PHYS REV LETT, V72, P2183, DOI 10.1103/PhysRevLett.72.2183&lt;br/&gt;     KOMIYAMA S, 1985, PHYS REV B, V32, P5532, DOI 10.1103/PhysRevB.32.5532&lt;br/&gt;     MARKELZ AG, 1994, SOLID STATE ELECTRON, V37, P1243, DOI 10.1016/0038-1101(94)90399-9&lt;br/&gt;     MARKELZ AG, 1995, THESIS U CALIFORNIA&lt;br/&gt;     SHAH J, 1984, APPL PHYS LETT, V44, P322, DOI 10.1063/1.94739&lt;br/&gt;     SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2&lt;br/&gt;     YANG CH, 1985, PHYS REV LETT, V55, P2359, DOI 10.1103/PhysRevLett.55.2359&lt;br/&gt;Asmar, NG Cerne, J Markelz, AG Gwinn, EG Sherwin, MS Campman, KL Gossard, AC&lt;br/&gt;Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;59&lt;br/&gt;&lt;br/&gt;7&lt;br/&gt;Amer inst physics&lt;br/&gt;Woodbury</style></notes><auth-address><style face="normal" font="default" size="100%">UNIV CALIF SANTA BARBARA,CTR FREE ELECTRON LASER STUDIES,SANTA BARBARA,CA 93106. UNIV CALIF SANTA BARBARA,DEPT ELECT &amp; COMP ENGN,SANTA BARBARA,CA 93106.&lt;br/&gt;Asmar, NG (corresponding author), UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106, USA.</style></auth-address></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Cerne, J.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">RESONANT-ENERGY RELAXATION OF TERAHERTZ-DRIVEN 2-DIMENSIONAL ELECTRON GASES</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1995</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Jun 15</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">24</style></number><volume><style face="normal" font="default" size="100%">51</style></volume><pages><style face="normal" font="default" size="100%">18041-18044</style></pages><isbn><style face="normal" font="default" size="100%">0163-1829</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><accession-num><style face="normal" font="default" size="100%">WOS:A1995RF85700093</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;119</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">DC TRANSPORT IN INTENSE, INPLANE TERAHERTZ ELECTRIC-FIELDS IN AL(X)GA(1-X)AS HETEROSTRUCTURES AT 300-K</style></title><secondary-title><style face="normal" font="default" size="100%">Solid-State Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Apr-Jun</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">4-6</style></number><volume><style face="normal" font="default" size="100%">37</style></volume><pages><style face="normal" font="default" size="100%">693-695</style></pages><isbn><style face="normal" font="default" size="100%">0038-1101</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We report 300 K studies of the dependence of the in-plane, d.c. conductivity, sigma(d.c.) (E(omega)), of a quasi 2D electron gas on the amplitude E(omega) and frequency of intense, far-infrared fields (omega/2pi = 0.24-3.5 THz). We measure sigma(d.c.) (E(omega) parallel-to E(d.c.)), where E(d.c.) is a small sensing field, and observe a monotonic decrease in sigma(d.c.) with increasing E(omega). Although a simple scaling ansatz collapses the measured sigma(d.c.) (E(omega)) data onto a single curve for frequencies from 0.25-3.45 THz (at low to moderate scaled fields), the decrease in conductivity is substantially more rapid than expected from comparison to similar data taken by Masselink et al. [Solid-St. Electron. 31, 337 (1988)] at 35 GHz. We tentatively attribute this difference to effects of a high-frequency modulation in the electron temperature.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NE79600042</style></accession-num><notes><style face="normal" font="default" size="100%">Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;6th International Conference on Modulated Semiconductor Structures&lt;br/&gt;Aug 23-27, 1993&lt;br/&gt;Garmisch partenkir, germany&lt;br/&gt;Tech univ munchen, walter schottky inst&lt;br/&gt;1</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">ENERGY RELAXATION AT THZ FREQUENCIES IN ALXGA1-XAS HETEROSTRUCTURES</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Science and Technology</style></secondary-title><short-title><style face="normal" font="default" size="100%">Semicond. Sci. Technol.</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">828-830</style></pages><isbn><style face="normal" font="default" size="100%">0268-1242</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We report 4.2 K studies of the dependence of the in-plane, DC conductivity of a quasi 2D electron gas on the amplitude E(omega) of applied fields with frequencies from 0.25 THz to 3.5 THz. We analyse the dependence of sigma(DC) on E(omega) assuming that electron-optical phonon scattering dominates energy relaxation, that the absorbed power has a Drude form and that the electron distribution is thermal. This simple analysis is self-consistent: Arrhenius plots of the estimated energy loss rate have a slope near -homega(LO)BAR/k(B) for all frequencies, as expected for energy loss by optical phonon emission. We find that the effective energy relaxation time tau(epsilon) varies with the frequency of the applied field, from tau(epsilon) approximately 4 ps at 0.34 THz to tau(epsilon) approximately 0.3 ps at 3.45 THz. This may indicate a frequency-dependent form for the hot-phonon distribution.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NM75300116</style></accession-num><notes><style face="normal" font="default" size="100%">Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;S&lt;br/&gt;8th International Conference on Hot Carriers in Semiconductors&lt;br/&gt;Aug 16-20, 1993&lt;br/&gt;Oxford univ, oxford, england&lt;br/&gt;Sci &amp; engn res council; royal soc; brit council; oxford univ&lt;br/&gt;2</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Nguyen, C.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Far-infrared harmonic generation from semiconductor heterostructures</style></title><secondary-title><style face="normal" font="default" size="100%">SPIE Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year></dates><volume><style face="normal" font="default" size="100%">1854</style></volume><pages><style face="normal" font="default" size="100%">48-55</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Cerne, J.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Brar, B.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Frequency Dependence of the Third Order Susceptibility of InAs Quantum Wells at Terahertz Frequencies</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the International Conference on the Physics of Semiconductors</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">08/1994</style></date></pub-dates></dates><pages><style face="normal" font="default" size="100%">1193-1196</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Nguyen, C.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">GIANT 3RD-ORDER NONLINEAR SUSCEPTIBILITIES FOR INPLANE FAR-INFRARED EXCITATION OF SINGLE INAS QUANTUM-WELLS</style></title><secondary-title><style face="normal" font="default" size="100%">Solid-State Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Apr-Jun</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">4-6</style></number><volume><style face="normal" font="default" size="100%">37</style></volume><pages><style face="normal" font="default" size="100%">1243-1245</style></pages><isbn><style face="normal" font="default" size="100%">0038-1101</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Third-order, free-carrier nonlinear susceptibilities, chi(3), have been measured between 19 and 23 cm-1 for three InAs/AlSb quantum wells with sheet densities between 2.5 x 10(12) cm-2 and 8 x 10(12) cm-2. We find that these wells are strongly nonlinear at far-infrared frequencies: odd harmonics ninth order have been observed at high incident intensities, and the peak value of chi(3) reaches approximately 1 esu. This is several orders of magnitude larger than previously reported values for chi(3) in bulk n-GaAs (10(-4) esu)[1] and in polyacetylene (10(-7) esu)[2]. The large magnitude of chi(3) is attributed to the high carrier density in the InAs wells, and to the strong non-parabolicity of the conduction band in InAs. However, the free-carrier chi(3) for bulk InAs predicts a density-dependence different from that observed, and the measured decrease in chi(3) with increasing intensity indicates non-perturbative response. We find that the anisotropy of chi(3) displays the expected 4-fold symmetry.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NE79600163</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;6th International Conference on Modulated Semiconductor Structures&lt;br/&gt;Aug 23-27, 1993&lt;br/&gt;Garmisch partenkir, germany&lt;br/&gt;Tech univ munchen, walter schottky inst&lt;br/&gt;9</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Nguyen, C.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">SUBCUBIC POWER DEPENDENCE OF 3RD-HARMONIC GENERATION FOR INPLANE, FAR-INFRARED EXCITATION OF INAS QUANTUM-WELLS</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Science and Technology</style></secondary-title><short-title><style face="normal" font="default" size="100%">Semicond. Sci. Technol.</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">634-637</style></pages><isbn><style face="normal" font="default" size="100%">0268-1242</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Large third-order, free-carrier nonlinear susceptibilities, chi(3) (to approximately 0.2 esu), and subcubic dependence of the third-harmonic power on the incident intensity, have been observed between 19 cm-1 and 23 cm-1 for InAs/AlSb quantum wells with electron sheet densities between 2.5 x 10(12) cm-2 and 8 X 10(12) cm-2. We find that the transmission of the fundamental, and the samples&#039; DC conductivity, decrease with increasing incident intensity, indicating a large rise in the scattering rate. Using the intensity-dependent transmission to account for absorption in the sample is not sufficient to recover a cubic power law for the third-harmonic intensity. In addition, given the increased scattering rate indicated by the conductivity data, the bulk free-carrier chi(3) due to non-parabolicity should decrease dramatically with increasing fundamental intensity, contrary to our results. Thus, non-parabolicity alone cannot account for the observed third-harmonic response.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NM75300063</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;S&lt;br/&gt;8th International Conference on Hot Carriers in Semiconductors&lt;br/&gt;Aug 16-20, 1993&lt;br/&gt;Oxford univ, oxford, england&lt;br/&gt;Sci &amp; engn res council; royal soc; brit council; oxford univ&lt;br/&gt;4</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Bewley, W. W.</style></author><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Galdrikian, B.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Sundaram, M.</style></author><author><style face="normal" font="default" size="100%">Birnir, B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Far-infrared nonlinear response of electrons in semiconductor nanostructures</style></title><secondary-title><style face="normal" font="default" size="100%">SPIE Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><volume><style face="normal" font="default" size="100%">1854</style></volume><pages><style face="normal" font="default" size="100%">36-47</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>