<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">George, D. K.</style></author><author><style face="normal" font="default" size="100%">Chen, J. Y.</style></author><author><style face="normal" font="default" size="100%">He, Yunfen</style></author><author><style face="normal" font="default" size="100%">Knab, J. R.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Functional-State Dependence of Picosecond Protein Dynamics</style></title><secondary-title><style face="normal" font="default" size="100%">J. Phys. Chem. B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><volume><style face="normal" font="default" size="100%">125</style></volume><pages><style face="normal" font="default" size="100%">11134-11140</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p class=&quot;rtejustify&quot;&gt;We examine temperature-dependent picosecond dynamics of two benchmarking proteins lysozyme and cytochrome &lt;em&gt;c&lt;/em&gt; using temperature-dependent terahertz permittivity measurements. We find that a double Arrhenius temperature dependence with activation energies &lt;em&gt;E&lt;/em&gt;&lt;sub&gt;1&lt;/sub&gt; ∼ 0.1 kJ/mol and &lt;em&gt;E&lt;/em&gt;&lt;sub&gt;2&lt;/sub&gt; ∼ 10 kJ/mol fits the folded and ligand-free state response. The higher activation energy is consistent with the so-called protein dynamical transition associated with beta relaxations at the solvent–protein interface. The lower activation energy is consistent with correlated structural motions. When the structure is removed by denaturing, the lower-activation-energy process is no longer present. Additionally, the lower-activation-energy process is diminished with ligand binding but not for changes in the internal oxidation state. We suggest that the lower-energy activation process is associated with collective structural motions that are no longer accessible with denaturing or binding.&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">40</style></issue><section><style face="normal" font="default" size="100%">11134</style></section></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chen, J. Y.</style></author><author><style face="normal" font="default" size="100%">George, D. K.</style></author><author><style face="normal" font="default" size="100%">He, Y.</style></author><author><style face="normal" font="default" size="100%">Knab, J. R.</style></author><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Functional State Dependence of Picosecond Protein Dynamics</style></title><secondary-title><style face="normal" font="default" size="100%">arXiv:1105.4425</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2012</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://arxiv.org/0054394</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">D. Wolpert</style></author><author><style face="normal" font="default" size="100%">W. Cox</style></author><author><style face="normal" font="default" size="100%">J. Cerne</style></author><author><style face="normal" font="default" size="100%">A. Markelz</style></author><author><style face="normal" font="default" size="100%">T. Zhao</style></author><author><style face="normal" font="default" size="100%">R. Ramesh</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Romanowicz M.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Finite size effects in ferroelectric nanosystems: Absence of mode softening</style></title><secondary-title><style face="normal" font="default" size="100%">2003 Nanotechnology Conference and Trade Show - Nanotech</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Ferroelectric materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Fourier Transform Infrared Spectroscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Frequency ranges</style></keyword><keyword><style  face="normal" font="default" size="100%">Lead compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">Mode softening</style></keyword><keyword><style  face="normal" font="default" size="100%">nanostructured materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Natural frequencies</style></keyword><keyword><style  face="normal" font="default" size="100%">Optical modes</style></keyword><keyword><style  face="normal" font="default" size="100%">Permittivity</style></keyword><keyword><style  face="normal" font="default" size="100%">phase transitions</style></keyword><keyword><style  face="normal" font="default" size="100%">phonons</style></keyword><keyword><style  face="normal" font="default" size="100%">Routers</style></keyword><keyword><style  face="normal" font="default" size="100%">Thermal effects</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2003</style></year><pub-dates><date><style  face="normal" font="default" size="100%">02/2003</style></date></pub-dates></dates><pub-location><style face="normal" font="default" size="100%">San Francisco, CA</style></pub-location><volume><style face="normal" font="default" size="100%">2</style></volume><pages><style face="normal" font="default" size="100%">76-81</style></pages><isbn><style face="normal" font="default" size="100%">0972842209</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We present measurements of the mode softening behavior for PbZr 0.5Ti0.5O3 (PZT(50)) thin films using terahertz time domain spectroscopy (TTDS). The films were grown using pulsed laser deposition (PLD) techniques on silicon substrates to study how reduced size affects the mode softening behavior. At room temperature two modes are observed at 1.1 THz (37 cm-1) and at 2.3 THz (77 cm-1). As the temperature is increased toward Tc we do not see strong mode softening, but rather a spectral weight transfer from the high frequency mode to the low frequency mode. This absence of mode softening is more dramatic than that reported by other investigators[1]. We will discuss the possible sources for this discrepancy. These results suggest a change in lattice dynamics for nanoscale ferroelectric films that may be highly dependent on the sample preparation technique.&lt;/p&gt;</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Nguyen, C.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Far-infrared harmonic generation from semiconductor heterostructures</style></title><secondary-title><style face="normal" font="default" size="100%">SPIE Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year></dates><volume><style face="normal" font="default" size="100%">1854</style></volume><pages><style face="normal" font="default" size="100%">48-55</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Heyman, J. N.</style></author><author><style face="normal" font="default" size="100%">Markelz, A. G.</style></author><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Campman, K. L.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">FAR-INFRARED SATURATION SPECTROSCOPY OF A SINGLE SQUARE-WELL</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Science and Technology</style></secondary-title><short-title><style face="normal" font="default" size="100%">Semicond. Sci. Technol.</style></short-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">627-629</style></pages><isbn><style face="normal" font="default" size="100%">0268-1242</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We have performed saturation spectroscopy measurements of the lowest intersubband transition in a single 400 angstrom GaAs/Al0.3Ga0.7As modulation-doped square quantum well. We couple intense tunable far-infrared radiation from the Santa Barbara free electron laser into our sample using an edge-coupling technique and measure absorption as a function of frequency and intensity. Saturation and frequency shifts in the absorption line are clearly observed. We attribute the frequency shifts to reductions in the many-body depolarization shift. From our preliminary measurements, we estimate the intersubband relaxation time to be 600 ps to within a factor of three.&lt;/p&gt;</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:A1994NM75300061</style></accession-num><notes><style face="normal" font="default" size="100%">Sherwin, Mark S/Q-4762-2017&lt;br/&gt;Sherwin, Mark S/0000-0002-3869-1893; Markelz, Andrea/0000-0003-0443-4319&lt;br/&gt;S&lt;br/&gt;8th International Conference on Hot Carriers in Semiconductors&lt;br/&gt;Aug 16-20, 1993&lt;br/&gt;Oxford univ, oxford, england&lt;br/&gt;Sci &amp; engn res council; royal soc; brit council; oxford univ&lt;br/&gt;31</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Cerne, J.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Brar, B.</style></author><author><style face="normal" font="default" size="100%">Kroemer, H.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Frequency Dependence of the Third Order Susceptibility of InAs Quantum Wells at Terahertz Frequencies</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the International Conference on the Physics of Semiconductors</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year><pub-dates><date><style  face="normal" font="default" size="100%">08/1994</style></date></pub-dates></dates><pages><style face="normal" font="default" size="100%">1193-1196</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sherwin, M. S.</style></author><author><style face="normal" font="default" size="100%">Asmar, N. G.</style></author><author><style face="normal" font="default" size="100%">Bewley, W. W.</style></author><author><style face="normal" font="default" size="100%">Craig, K.</style></author><author><style face="normal" font="default" size="100%">Felix, C. L.</style></author><author><style face="normal" font="default" size="100%">Galdrikian, B.</style></author><author><style face="normal" font="default" size="100%">Gwinn, E. G.</style></author><author><style face="normal" font="default" size="100%">Markelz, A.G.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Hopkins, P. F.</style></author><author><style face="normal" font="default" size="100%">Sundaram, M.</style></author><author><style face="normal" font="default" size="100%">Birnir, B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Far-infrared nonlinear response of electrons in semiconductor nanostructures</style></title><secondary-title><style face="normal" font="default" size="100%">SPIE Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><volume><style face="normal" font="default" size="100%">1854</style></volume><pages><style face="normal" font="default" size="100%">36-47</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>