Publications
“Far-Infrared Nonlinear Response Of Electrons In Semiconductor Nanostructures”. Spie Proceedings, 1993.
. “Dc Transport In Intense, Inplane Terahertz Electric-Fields In Al(X)Ga(1-X)As Heterostructures At 300-K”. Solid-State Electronics 37 (1994): 693-695. doi:10.1016/0038-1101(94)90278-X.
. “Energy Relaxation At Thz Frequencies In Alxga1-Xas Heterostructures”. Semiconductor Science And Technology 9 (1994): 828-830. doi:10.1088/0268-1242/9/5S/116.
. “Far-Infrared Harmonic Generation From Semiconductor Heterostructures”. Spie Proceedings, 1994.
. “Frequency Dependence Of The Third Order Susceptibility Of Inas Quantum Wells At Terahertz Frequencies”. Proceedings Of The International Conference On The Physics Of Semiconductors, 1994.
. “Giant 3Rd-Order Nonlinear Susceptibilities For Inplane Far-Infrared Excitation Of Single Inas Quantum-Wells”. Solid-State Electronics 37 (1994): 1243-1245. doi:10.1016/0038-1101(94)90399-9.
. “Subcubic Power Dependence Of 3Rd-Harmonic Generation For Inplane, Far-Infrared Excitation Of Inas Quantum-Wells”. Semiconductor Science And Technology 9 (1994): 634-637. doi:https://doi.org/10.1088/0268-1242/9/5S/063.
. “Resonant-Energy Relaxation Of Terahertz-Driven 2-Dimensional Electron Gases”. Physical Review B 51 (1995): 18041-18044. doi:10.1103/PhysRevB.51.18041.
. “Interband Impact Ionization By Terahertz Illumination Of Inas Heterostructures”. Applied Physics Letters 69 (1996): 3975-3977. doi:10.1063/1.117842.
. “Nonlinear Response Of Quantum-Confined Electrons In Nonparabolic Subbands”. Journal Of Applied Physics 80 (1996): 2533-2535. doi:10.1063/1.363040.
. “Temperature Of Quasi-Two-Dimensional Electron Gases Under Steady-State Terahertz Drive”. Applied Physics Letters 68 (1996): 829-831. doi:10.1063/1.116547.
. “Relaxation Times In Inas/Alsb Quantum Wells ”. Applied Physics Letters 72 (1998). doi:10.1063/1.121377.
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